AON6324 Datasheet and Replacement
Type Designator: AON6324
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 32.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Id| ⓘ - Maximum Drain Current: 85
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 400
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028
Ohm
Package:
DFN5X6
-
MOSFET ⓘ Cross-Reference Search
AON6324 Datasheet (PDF)
..1. Size:615K 1
aon6324.pdf 
AON632430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
..2. Size:352K aosemi
aon6324.pdf 
AON632430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.1. Size:346K 1
aon6354.pdf 
AON635430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:339K 1
aon6382.pdf 
AON638230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:368K 1
aon6380.pdf 
AON638030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 24A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:261K aosemi
aon6312.pdf 
AON631230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 130A Low Gate Charge RDS(ON) (at VGS=10V)
9.5. Size:346K aosemi
aon6354.pdf 
AON635430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
9.6. Size:261K aosemi
aon6370.pdf 
AON637030V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)
9.7. Size:459K aosemi
aon6362.pdf 
AON636230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:339K aosemi
aon6382.pdf 
AON638230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.9. Size:268K aosemi
aon6360.pdf 
AON636030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (enhanced MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.10. Size:265K aosemi
aon6368.pdf 
AON636830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)
9.11. Size:344K aosemi
aon6384.pdf 
AON638430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
9.12. Size:259K aosemi
aon6372.pdf 
AON637230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)
9.13. Size:344K aosemi
aon6358.pdf 
AON635830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.14. Size:368K aosemi
aon6380.pdf 
AON638030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 24A Low Gate Charge RDS(ON) (at VGS=10V)
9.15. Size:359K aosemi
aon6314.pdf 
AON631430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.16. Size:362K aosemi
aon6366e.pdf 
AON6366E30V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 34A Optimized for load switch RDS(ON) (at VGS=10V)
Datasheet: HFU1N60
, HFU2N60
, HFU70N03V
, 2SJ655
, 2SK2056
, 2SK2617ALS
, 2SK3607-01MR
, AO4472
, K4145
, SD2932
, STK1820F
, STP55NE06
, STP55NE06FP
, SUD50N024-06P
, SVF7N65T
, SVF7N65F
, AO3405
.
History: NDB7051
Keywords - AON6324 MOSFET datasheet
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