All MOSFET. AO4614 Datasheet

 

AO4614 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AO4614
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Maximum Power Dissipation (Pd): 2 W
   Maximum Drain-Source Voltage |Vds|: 40 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 6(5) A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 8.3(13.6) nC
   Rise Time (tr): 3.3 nS
   Drain-Source Capacitance (Cd): 95 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.031(0.045) Ohm
   Package: SOIC8

 AO4614 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO4614 Datasheet (PDF)

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ao4614.pdf

AO4614 AO4614

AO461440V Dual P + N-Channel MOSFETGeneral Description Product SummaryN-Channel P-ChannelThe AO4614 uses advanced trench technology VDS (V) = 40V -40VMOSFETs to provide excellent RDS(ON) and low gateID = 6A (VGS=10V) -5A (VGS = -10V)charge. The complementary MOSFETs may be used inRDS(ON) RDS(ON)H-bridge, Inverters and other applications.

 0.1. Size:233K  aosemi
ao4614b.pdf

AO4614 AO4614

AO4614B40V Dual P + N-Channel MOSFETGeneral Description Product SummaryN-Channel P-ChannelThe AO4614B uses advanced trench technology VDS (V) = 40V, -40VMOSFETs to provide excellent RDS(ON) and low gateID = 6A (VGS=10V) -5A (VGS=-10V)charge. The complementary MOSFETs may be usedRDS(ON)in H-bridge, Inverters and other applications.

 0.2. Size:2230K  kexin
ao4614a.pdf

AO4614 AO4614

SMD Type MOSFETComplementary Trench MOSFET AO4614A (KO4614A)SOP-8 Unit:mm Features N-Channel : VDS (V) = 40VID = 6 A (VGS = 10V)1.50 0.15RDS(ON) 31m (VGS = 10V)RDS(ON) 45m (VGS = 4.5V)1 S2 5 D1 6 D1 P-Channel : 2 G27 D23 S1 VDS (V) = -40V8 D24 G1ID = -5 A (VGS = -10V)RDS(ON) 45m (VGS = -10V)RDS(ON) 63m (VGS = -4.5V)

 0.3. Size:1597K  kexin
ao4614b.pdf

AO4614 AO4614

SMD Type MOSFETComplementary Trench MOSFET AO4614B (KO4614B)SOP-8 Unit:mm Features N-Channel : VDS (V) = 40VID = 6 A (VGS = 10V)1.50 0.15RDS(ON) 30m (VGS = 10V)RDS(ON) 38m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -40V8 D24 G1ID = -5 A (VGS = -10V)RDS(ON) 45m (VGS = -10V)RDS(ON) 63m (VGS = -4.5V)

 0.4. Size:891K  cn vbsemi
ao4614-30v.pdf

AO4614 AO4614

AO4614&-30Vwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 18N50 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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