All MOSFET. AO4722 Datasheet

 

AO4722 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AO4722
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.3 nC
   trⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SO8 SOIC8

 AO4722 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO4722 Datasheet (PDF)

 ..1. Size:174K  aosemi
 ao4722.pdf

AO4722 AO4722

AO472230V N-Channel MOSFETSRFET TM General Description Product SummaryTMVDS (V) = 30VSRFET The AO4722 uses advanced trenchID =11.6A (VGS = 10V)technology with a monolithically integratedSchottky diode to provide excellent RDS(ON),andRDS(ON)

 9.1. Size:178K  aosemi
 ao4724.pdf

AO4722 AO4722

AO472430V N-Channel MOSFETSRFET TM General Description Product SummaryTMVDS (V) = 30VSRFET The AO4724 uses advanced trenchID = 10.5A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON),and low gateRDS(ON)

 9.2. Size:199K  aosemi
 ao4720.pdf

AO4722 AO4722

AO472030V N-Channel MOSFETSRFET TM General Description Product SummaryTMVDS (V) = 30VSRFET The AO4720 uses advanced trenchID =13A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON),and low gateRDS(ON)

 9.3. Size:178K  aosemi
 ao4726.pdf

AO4722 AO4722

AO472630V N-Channel MOSFETSRFET TM General Description Product SummaryTMVDS (V) = 30VSRFET The AO4726 uses advanced trenchID =18A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON) and low gate charge.RDS(ON)

 9.4. Size:217K  aosemi
 ao4728.pdf

AO4722 AO4722

AO472830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS (V) = 30VSRFETTM AO4728 uses advanced trench technologyID = 20A (VGS = 10V)with a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device isRDS(ON)

 9.5. Size:1501K  kexin
 ao4724.pdf

AO4722 AO4722

SMD Type MOSFETN-Channel MOSFETAO4724 (KO4724)SOP-8 Unit:mm Features VDS (V) = 30V ID = 10.5 A (VGS = 10V) 0.151.50 RDS(ON) 17.5m (VGS = 10V) RDS(ON) 29m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25

 9.6. Size:1844K  kexin
 ao4720.pdf

AO4722 AO4722

SMD Type MOSFET N-Channel MOSFETAO4720 (KO4720)SOP-8Unit:mm Features VDS (V) = 30V ID = 13 A (VGS = 10V)1.50 0.15 RDS(ON) 11m (VGS = 10V) RDS(ON) 17.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25

 9.7. Size:824K  cn vbsemi
 ao4728.pdf

AO4722 AO4722

AO4728www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STI40N65M2

 

 
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