All MOSFET. AOB20S60L Datasheet

 

AOB20S60L Datasheet and Replacement


   Type Designator: AOB20S60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 266 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
   Package: TO263
 

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AOB20S60L Datasheet (PDF)

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AOB20S60L

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

 6.1. Size:405K  aosemi
 aot20s60 aob20s60 aotf20s60.pdf pdf_icon

AOB20S60L

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

 6.2. Size:324K  aosemi
 aob20s60.pdf pdf_icon

AOB20S60L

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

 6.3. Size:255K  inchange semiconductor
 aob20s60.pdf pdf_icon

AOB20S60L

isc N-Channel MOSFET Transistor AOB20S60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.199(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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Datasheet: AOD408 , AOD410 , AOB10N60L , AOB11S60L , AOB11S65L , AOB12N50L , AOB15S60L , AOB15S65L , IRF520 , AOB25S65L , AOB270L , AOB27S60L , AOB418 , AOB482 , AOB4S60L , AOB7S60L , AOB7S65L .

History: PE532DY | OSG60R1K8PF

Keywords - AOB20S60L MOSFET datasheet

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