AOK20N60L Specs and Replacement
Type Designator: AOK20N60L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 125 nS
Cossⓘ -
Output Capacitance: 273 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: TO247
- MOSFET ⓘ Cross-Reference Search
AOK20N60L datasheet
..1. Size:445K aosemi
aok20n60l.pdf 
AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒
..2. Size:377K inchange semiconductor
aok20n60l.pdf 
isc N-Channel MOSFET Transistor AOK20N60L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.37 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
6.1. Size:445K aosemi
aok20n60.pdf 
AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒
9.1. Size:1277K aosemi
aok20b65m1.pdf 
AOK20B65M1/AOT20B65M1/AOB20B65M1 TM 650V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 20A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab... See More ⇒
9.2. Size:720K aosemi
aok20b60d1.pdf 
AOK20B60D1 TM 600V, 20A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 20A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance ... See More ⇒
9.3. Size:713K aosemi
aok20b135d1.pdf 
AOK20B135D1 TM 1350V, 20A Alpha IGBT with Diode General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.57V Better thermal management ... See More ⇒
9.4. Size:1321K aosemi
aok20b120e1.pdf 
AOK20B120E1 TM Alpha IGBT with Diode 1200V, 20A General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1200V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.68V Better thermal management Hi... See More ⇒
9.5. Size:1095K aosemi
aok20b65m2.pdf 
AOK20B65M2 TM 650V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 20A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies ... See More ⇒
9.6. Size:810K aosemi
aok20b120e2.pdf 
AOK20B120E2 TM 1200V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary Latest Alpha IGBT ( IGBT) technology VCE 1200V Best in Class VCE(sat) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time VCE(sat) (TC=25 C) 1.75V Very smooth turn-off current waveforms reduce EM... See More ⇒
9.7. Size:1176K aosemi
aok20b120d1.pdf 
AOK20B120D1 TM 1200V, 20A Alpha IGBT with Diode General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1200V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.54V Better thermal management ... See More ⇒
9.8. Size:1683K aosemi
aok20b135e1.pdf 
AOK20B135E1 TM Alpha IGBT with Diode 1350V, 20A General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.8V Better thermal management Hig... See More ⇒
9.9. Size:251K aosemi
aok20s60.pdf 
AOK20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK20S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 80A high levels of performance and robustness in switching RDS(ON),max 0.199 applications. Qg,typ 20nC By providing low RDS(on), Qg and EOSS along with Eo... See More ⇒
9.10. Size:251K aosemi
aok20s60l.pdf 
AOK20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK20S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 80A high levels of performance and robustness in switching RDS(ON),max 0.199 applications. Qg,typ 20nC By providing low RDS(on), Qg and EOSS along with Eo... See More ⇒
9.11. Size:212K inchange semiconductor
aok20s60.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOK20S60 FEATURES With TO-247 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
9.12. Size:378K inchange semiconductor
aok20s60l.pdf 
isc N-Channel MOSFET Transistor AOK20S60L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.199 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: AOD4104, AOD4106, AOD4110, AOD4112, AOI1N60L, AOI472A, AOI518, AOK18N65L, AO4407A, AOK20S60L, AOK22N50L, AOK27S60L, AOK42S60L, AOL1206, AOL1408, AOL1412, AOL1420
Keywords - AOK20N60L MOSFET specs
AOK20N60L cross reference
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AOK20N60L replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.