AOK27S60L Datasheet and Replacement
Type Designator: AOK27S60L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 26 nC
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO247
AOK27S60L substitution
AOK27S60L Datasheet (PDF)
aok27s60l.pdf
AOK27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK27S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 110Ahigh levels of performance and robustness in switching RDS(ON),max 0.16applications. Qg,typ 26nCBy providing low RDS(on), Qg and EOSS along with Eo
aok27s60l.pdf
isc N-Channel MOSFET Transistor AOK27S60LFEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.16(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge
aok27s60.pdf
AOK27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK27S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 110Ahigh levels of performance and robustness in switching RDS(ON),max 0.16applications. Qg,typ 26nCBy providing low RDS(on), Qg and EOSS along with Eo
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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