AOK27S60L MOSFET Datasheet: N-Ch, 600V, 27A. Full specification with pinout and replacement list

AOK27S60L Specs and Replacement

Type Designator: AOK27S60L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO247

AOK27S60L substitution

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AOK27S60L datasheet

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AOK27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK27S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 110A high levels of performance and robustness in switching RDS(ON),max 0.16 applications. Qg,typ 26nC By providing low RDS(on), Qg and EOSS along with Eo... See More ⇒

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isc N-Channel MOSFET Transistor AOK27S60L FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.16 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge... See More ⇒

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