AOL1420 Datasheet and Replacement
Type Designator: AOL1420
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15.5 nS
Cossⓘ - Output Capacitance: 700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: ULTRASO8
AOL1420 substitution
AOL1420 Datasheet (PDF)
aol1420.pdf

AOL1420N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1420 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and lowID = 85A (VGS = 10V)gate resistance. This device is ideally suited for useRDS(ON)
aol1428.pdf

AOL1428N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device VDS (V) = 30Vis suitable for use as a high side switch in SMPS and ID = 45A (VGS = 10V)general purpose applications.RDS(ON)
aol1426.pdf

AOL1426N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1426 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.This deviceID = 46A (VGS = 10V)is suitable for use as a high side switch in SMPS andRDS(ON)
aol1428a.pdf

AOL1428A30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1428A combines advanced trench MOSFET 30V49Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). This device is suitable for use as a
Datasheet: AOK20N60L , AOK20S60L , AOK22N50L , AOK27S60L , AOK42S60L , AOL1206 , AOL1408 , AOL1412 , IRF840 , AOL1428 , AOL1436 , AOL1444 , AOL1446 , AOL1704 , AOU7S60 , AOWF240 , AOWF7S60 .
Keywords - AOL1420 MOSFET datasheet
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