All MOSFET. AOL1420 Datasheet

 

AOL1420 Datasheet and Replacement


   Type Designator: AOL1420
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: ULTRASO8
 

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AOL1420 Datasheet (PDF)

 ..1. Size:235K  aosemi
 aol1420.pdf pdf_icon

AOL1420

AOL1420N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1420 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and lowID = 85A (VGS = 10V)gate resistance. This device is ideally suited for useRDS(ON)

 8.1. Size:230K  aosemi
 aol1428.pdf pdf_icon

AOL1420

AOL1428N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device VDS (V) = 30Vis suitable for use as a high side switch in SMPS and ID = 45A (VGS = 10V)general purpose applications.RDS(ON)

 8.2. Size:231K  aosemi
 aol1426.pdf pdf_icon

AOL1420

AOL1426N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1426 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.This deviceID = 46A (VGS = 10V)is suitable for use as a high side switch in SMPS andRDS(ON)

 8.3. Size:240K  aosemi
 aol1428a.pdf pdf_icon

AOL1420

AOL1428A30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1428A combines advanced trench MOSFET 30V49Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). This device is suitable for use as a

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Keywords - AOL1420 MOSFET datasheet

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