AOD4187 Specs and Replacement
Type Designator: AOD4187
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ -
Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO252
- MOSFET ⓘ Cross-Reference Search
AOD4187 datasheet
..1. Size:142K aosemi
aod4187.pdf 
AOD4187 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4187 uses advanced trench technology and VDS (V) = -40V design to provide excellent RDS(ON) with low gate charge. ID = -45A (VGS = -10V) With the excellent thermal resistance of the DPAK RDS(ON) ... See More ⇒
8.1. Size:269K aosemi
aod4185 aoi4185.pdf
AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench VDS (V) = -40V technology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON) ... See More ⇒
8.2. Size:214K aosemi
aod4189.pdf
AOD4189 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4189 uses advanced trench technology and VDS (V) = -40V design to provide excellent RDS(ON) with low gate ID = -40A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON) ... See More ⇒
8.3. Size:269K aosemi
aod4185.pdf
AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench VDS (V) = -40V technology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON) ... See More ⇒
8.4. Size:287K aosemi
aod4184.pdf
AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary VDS The AOD4184/AOI4184 used advanced trench technology 40V 50A and design to provide excellent RDS(ON) with low gate ID (at VGS=10V) charge. With the excellent thermal resistance of the DPAK ... See More ⇒
8.5. Size:232K aosemi
aod4184a.pdf
AOD4184A 40V N-Channel MOSFET General Description Product Summary VDS The AOD4184A combines advanced trench MOSFET 40V 50A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). This device is well suited for high ... See More ⇒
8.6. Size:262K aosemi
aod4182.pdf
AOD4182 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AOD4182 is fabricated with SDMOSTM trench ID (at VGS=10V) 53A technology that combines excellent RDS(ON) with low gate ... See More ⇒
8.7. Size:263K aosemi
aod4180.pdf
AOD4180 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AOD4180 is fabricated with SDMOSTM trench 54A ID (at VGS=10V) technology that combines excellent RDS(ON) with low gate ... See More ⇒
8.8. Size:148K aosemi
aod4186.pdf
AOD4186 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide VDS (V) =40V extremely low RDS(ON). This device is ideal for low (VGS = 10V) ID = 35A voltage inverter applications. (VGS = 10V) RDS(ON) ... See More ⇒
8.9. Size:344K aosemi
aod4184 aoi4184.pdf
AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary VDS 40V The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with ID (at VGS=10V) 50A low gate charge. With the excellent thermal resistance of RDS(ON) (at VGS=10V) ... See More ⇒
8.10. Size:280K aosemi
aod418.pdf
AOD418/AOI418 30V N-Channel MOSFET General Description Product Summary VDS The AOD418/AOI418 uses advanced trench technology to 30V 36A provide excellent RDS(ON), low gate charge and low gate ID (at VGS= 10V) resistance. With the excellent thermal resistance of the ... See More ⇒
8.11. Size:938K cn vbsemi
aod4189.pdf
AOD4189 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle... See More ⇒
8.12. Size:884K cn vbsemi
aod4185.pdf
AOD4185 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle... See More ⇒
8.13. Size:838K cn vbsemi
aod4184.pdf
AOD4184 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATI... See More ⇒
8.14. Size:1719K cn vbsemi
aod4180.pdf
AOD4180 www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0055 at VGS = 10 V 75a 80 0.0088 at VGS = 6.0 V 65a 17.1 nC APPLICATIONS 0.0115 at VGS = 5.0 V 54 Primary Side Switching Synchronous Rectification TO-252 D DC/AC Inverters LED Backlightin... See More ⇒
8.15. Size:265K inchange semiconductor
aod4189.pdf
isc P-Channel MOSFET Transistor AOD4189 FEATURES Drain Current I = -40A@ T =25 D C Drain Source Voltage- V =-40V(Min) DSS Static Drain-Source On-Resistance R =22m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒
8.16. Size:265K inchange semiconductor
aod4185.pdf
isc P-Channel MOSFET Transistor AOD4185 FEATURES Drain Current I = -40A@ T =25 D C Drain Source Voltage- V = -40V(Min) DSS Static Drain-Source On-Resistance R =15m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
8.17. Size:249K inchange semiconductor
aod4184.pdf
isc N-Channel MOSFET Transistor AOD4184 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general... See More ⇒
8.18. Size:249K inchange semiconductor
aod4184a.pdf
isc N-Channel MOSFET Transistor AOD4184A FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera... See More ⇒
8.19. Size:265K inchange semiconductor
aod4182.pdf
isc N-Channel MOSFET Transistor AOD4182 FEATURES Drain Current I = 53A@ T =25 D C Drain Source Voltage- V =80V(Min) DSS Static Drain-Source On-Resistance R =15.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒
8.20. Size:266K inchange semiconductor
aod4180.pdf
isc N-Channel MOSFET Transistor AOD4180 FEATURES Drain Current I = 54A@ T =25 D C Drain Source Voltage- V =80V(Min) DSS Static Drain-Source On-Resistance R =14m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒
8.21. Size:207K inchange semiconductor
aod4186.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor AOD4186 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
8.22. Size:249K inchange semiconductor
aod418.pdf
isc N-Channel MOSFET Transistor AOD418 FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera... See More ⇒
Detailed specifications: AOL1444, AOL1446, AOL1704, AOU7S60, AOWF240, AOWF7S60, AOD414, AOD4184, IRF640N, AOD4191L, AOD420, AOD448, AOD454, AOD456A, AOD460, AOD466, AOD472
Keywords - AOD4187 MOSFET specs
AOD4187 cross reference
AOD4187 equivalent finder
AOD4187 pdf lookup
AOD4187 substitution
AOD4187 replacement
Can't find your MOSFET?
Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
