AOD472A Datasheet PDF and Equivalents Search

 ..1. Size:154K  aosemi
 aod472a.pdf

AOD472A N-Channel SDMOSTM POWER Transistor General Description Features VDS (V) = 25V The AOD472A is fabricated with SDMOSTM trench ID = 55A (VGS = 10V) technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) ... See More ⇒

 8.1. Size:145K  aosemi
 aod472.pdf

AOD472 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD472 uses advanced trench technology and VDS (V) = 25V design to provide excellent RDS(ON) with low gate ID = 55A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) ... See More ⇒

 8.2. Size:789K  cn vbsemi
 aod472.pdf

AOD472 www.VBsemi.tw N-Channel 20-V (D-S)175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 65 20 20 0.008 @ VGS = 2.5 V 45 D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Paramet... See More ⇒

 9.1. Size:289K  aosemi
 aod474b.pdf

AOD474B 75V N-Channel MOSFET General Description Product Summary VDS The AOD474B combines advanced trench MOSFET 75V technology with a low resistance package to provide ID (at VGS=10V) 10A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:422K  aosemi
 aod478 aoi478.pdf

AOD478/AOI478 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 11A provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V) ... See More ⇒

 9.3. Size:208K  aosemi
 aod476.pdf

AOD476 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD476 uses advanced trench technology and VDS (V) = 20V design to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) ... See More ⇒

 9.4. Size:290K  aosemi
 aod474.pdf

AOD474 75V N-Channel MOSFET General Description Product Summary VDS The AOD474 combines advanced trench MOSFET 75V technology with a low resistance package to provide ID (at VGS=10V) 10A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V) ... See More ⇒

 9.5. Size:422K  aosemi
 aod478.pdf

AOD478/AOI478 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 11A provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V) ... See More ⇒

 9.6. Size:288K  aosemi
 aod474a.pdf

AOD474A 75V N-Channel MOSFET General Description Product Summary VDS The AOD474A combines advanced trench MOSFET 75V technology with a low resistance package to provide ID (at VGS=10V) 10A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V) ... See More ⇒

 9.7. Size:265K  inchange semiconductor
 aod476.pdf

isc N-Channel MOSFET Transistor AOD476 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V =20V(Min) DSS Static Drain-Source On-Resistance R = 21m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒

 9.8. Size:265K  inchange semiconductor
 aod474.pdf

isc N-Channel MOSFET Transistor AOD474 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒

 9.9. Size:265K  inchange semiconductor
 aod478.pdf

isc N-Channel MOSFET Transistor AOD478 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 140m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒