All MOSFET. AOTF11S65L Datasheet

 

AOTF11S65L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTF11S65L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.2 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm
   Package: TO220F

 AOTF11S65L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTF11S65L Datasheet (PDF)

 ..1. Size:300K  aosemi
 aotf11s65l.pdf

AOTF11S65L AOTF11S65L

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

 5.1. Size:299K  aosemi
 aotf11s65.pdf

AOTF11S65L AOTF11S65L

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

 5.2. Size:250K  inchange semiconductor
 aotf11s65.pdf

AOTF11S65L AOTF11S65L

isc N-Channel MOSFET Transistor AOTF11S65FEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:292K  aosemi
 aotf11s60.pdf

AOTF11S65L AOTF11S65L

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

 6.2. Size:253K  inchange semiconductor
 aotf11s60.pdf

AOTF11S65L AOTF11S65L

isc N-Channel MOSFET Transistor AOTF11S60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: R6004JNX

 

 
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