AOTF7S60L PDF and Equivalents Search

 

AOTF7S60L Specs and Replacement

Type Designator: AOTF7S60L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO220F

AOTF7S60L substitution

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AOTF7S60L datasheet

 6.1. Size:646K  aosemi
 aotf7s60.pdf pdf_icon

AOTF7S60L

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low RD... See More ⇒

 6.2. Size:287K  aosemi
 aotf7s60-l.pdf pdf_icon

AOTF7S60L

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R... See More ⇒

 6.3. Size:288K  aosemi
 aot7s60 aob7s60 aotf7s60.pdf pdf_icon

AOTF7S60L

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R... See More ⇒

 6.4. Size:252K  inchange semiconductor
 aotf7s60.pdf pdf_icon

AOTF7S60L

isc N-Channel MOSFET Transistor AOTF7S60 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒

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Detailed specifications: AOD606, AOTF11S65L, AOTF15S60L, AOTF15S65L, AOTF18N65L, AOTF20S60L, AOTF298L, AOTF7S60, AO3401, AOT400, AOT402, AOT426, AOT428, AOT42S60L, AOT462, AOT4S60L, AOT7S60L

Keywords - AOTF7S60L MOSFET specs

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