All MOSFET. AOT15S65 Datasheet

 

AOT15S65 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOT15S65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 24 nS

Drain-Source Capacitance (Cd): 58 pF

Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm

Package: TO220

AOT15S65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT15S65 Datasheet (PDF)

1.1. aot15s65.pdf Size:302K _aosemi

AOT15S65
AOT15S65

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 17.2nC By provid

1.2. aot15s65l.pdf Size:302K _aosemi

AOT15S65
AOT15S65

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 17.2nC By provid

3.1. aot15s60l.pdf Size:343K _aosemi

AOT15S65
AOT15S65

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 16nC By providing

3.2. aot15s60.pdf Size:343K _aosemi

AOT15S65
AOT15S65

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 16nC By providing

Datasheet: AON4420 , AON4602 , AON4701 , AON5800 , AON5802A , AOT11S60L , AOT11S65L , AOT15S60L , IRF640N , AOT15S65L , AOT20N25L , AOT20N60L , AOT20S60L , AOT22N50L , AOT25S65L , AOT270L , AOT27S60L .

 


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