AOT20N25L MOSFET Datasheet: N-Ch, 250V, 20A. Full specification with pinout and replacement list

AOT20N25L Specs and Replacement

Type Designator: AOT20N25L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 167 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO220

AOT20N25L substitution

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AOT20N25L datasheet

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AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150 The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒

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isc N-Channel MOSFET Transistor AOT20N25 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

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AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒