AOT22N50L MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT22N50L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 69 nC
trⓘ - Rise Time: 122 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO220
AOT22N50L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT22N50L Datasheet (PDF)
aot22n50l.pdf
AOT22N50/AOTF22N50500V,22A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT22N50 & AOTF22N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 22Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aot22n50.pdf
AOT22N50/AOTF22N50500V,22A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT22N50 & AOTF22N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 22Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aot22n50.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOT22N50FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPopular AC-DC applicationsPower supplySwitching applicationsABS
Datasheet: AOT11S60L , AOT11S65L , AOT15S60L , AOT15S65 , AOT15S65L , AOT20N25L , AOT20N60L , AOT20S60L , 7N60 , AOT25S65L , AOT270L , AOT27S60L , AON6906 , AON6908 , AON6912 , AON6932 , AON6934 .
History: SIHG17N60D
History: SIHG17N60D
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