All MOSFET. AOT22N50L Datasheet

 

AOT22N50L Datasheet and Replacement


   Type Designator: AOT22N50L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 122 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO220
 

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AOT22N50L Datasheet (PDF)

 ..1. Size:534K  aosemi
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AOT22N50L

AOT22N50/AOTF22N50500V,22A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT22N50 & AOTF22N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 22Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.1. Size:534K  aosemi
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AOT22N50L

AOT22N50/AOTF22N50500V,22A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT22N50 & AOTF22N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 22Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.2. Size:205K  inchange semiconductor
 aot22n50.pdf pdf_icon

AOT22N50L

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOT22N50FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPopular AC-DC applicationsPower supplySwitching applicationsABS

Datasheet: AOT11S60L , AOT11S65L , AOT15S60L , AOT15S65 , AOT15S65L , AOT20N25L , AOT20N60L , AOT20S60L , 2N60 , AOT25S65L , AOT270L , AOT27S60L , AON6906 , AON6908 , AON6912 , AON6932 , AON6934 .

History: OSG60R1K2PF | OSG60R380AF | OSG60R1K8AF | AOTL66810Q | ELM34406AA-N | OSG60R320FT3ZF | MSD23N22

Keywords - AOT22N50L MOSFET datasheet

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