AOT270L MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT270L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 500 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 140 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 153 nC
Rise Time (tr): 24 nS
Drain-Source Capacitance (Cd): 1560 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm
Package: TO220
AOT270L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT270L Datasheet (PDF)
aot270l.pdf
AOT270L/AOB270L75V N-Channel MOSFETGeneral Description Product SummaryVDS75VThe AOT270L/AOB270L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
aot270al.pdf
AOT270AL/AOB270AL75V N-Channel MOSFETGeneral Description Product SummaryVDS75VThe AOT270AL/AOB270AL uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
aot270al.pdf
sc N-Channel MOSFET Transistor AOT270ALFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
aot27s60.pdf
AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin
aot27s60 aob27s60 aotf27s60.pdf
AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin
aot27s60l.pdf
AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin
aot27s60.pdf
isc N-Channel MOSFET Transistor AOT27S60FEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.16(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
