AON6414
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6414
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 5.5
nS
Cossⓘ -
Output Capacitance: 340
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105
Ohm
Package:
DFN5X6
AON6414
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6414
Datasheet (PDF)
..1. Size:156K aosemi
aon6414.pdf 
AON641430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
0.1. Size:265K 1
aon6414al.pdf
AON6414AL30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6414AL uses advanced trench technology to 30Vprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V)50Asuitable for use as a high side switch in SMPS and
0.2. Size:384K aosemi
aon6414al.pdf
AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
0.3. Size:268K aosemi
aon6414a.pdf
AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
