2SK0665G0L MOSFET Datasheet: N-Ch, 20V, 0.1A. Full specification with pinout and replacement list

2SK0665G0L Specs and Replacement

Type Designator: 2SK0665G0L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 1000 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm

Package: SC85

2SK0665G0L substitution

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2SK0665G0L datasheet

..1. Size:220K panasonic
2sk066500l 2sk0665g0l.pdf pdf_icon

Silicon MOSFETs (Small Signal) 2SK0665 (2SK665) Silicon N-channel MOSFET Unit mm For switching circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features High-speed switching Small drive current owing to high input inpedance 1 2 High electrostatic breakdown voltage (0.65) (0.65) 1.3 0.1 Absolute Maximum Ratings Ta = 25 C 2.0 0.2 Parameter Symbol Rating Unit ... See More ⇒

8.1. Size:76K panasonic
2sk066400l.pdf pdf_icon

Silicon MOS FETs (Small Signal) 2SK0664 (2SK664) Silicon N-Channel MOS FET unit mm 0.15+0.10 0.3+0.1 0.05 For switching 0.0 3 Features High-speed switching S-mini type package, allowing downsizing of the sets and auto- 1 2 matic insertion through the tape/magazine packing. (0.65) (0.65) 1.3 0.1 2.0 0.2 10 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol R... See More ⇒

8.2. Size:76K panasonic
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9.1. Size:107K panasonic
2sk0601.pdf pdf_icon

This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit mm For switching circuits 4.5 0.1 1.6 0.2 1.5 0.1 Features Low drain-souce ON resistance RDS(on) High-speed switching Allowing to be driven directly by CMOS and TTL 1 23 Mini-power type package, allowing downsizing of t... See More ⇒