All MOSFET. 2SK1001 Datasheet

 

2SK1001 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1001
   Marking Code: X41
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 22 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: SOT23

 2SK1001 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1001 Datasheet (PDF)

 ..1. Size:125K  no
 2sk1001.pdf

2SK1001

 8.1. Size:245K  1
 2sk1007-01.pdf

2SK1001 2SK1001

FUJI POWER MOSFET2SK1007-01N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDEC TO-220ABEIAJ SC-46Equivalent circuit schematicMaxi

 8.2. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

2SK1001

 8.3. Size:211K  1
 2sk1006-01mr.pdf

2SK1001 2SK1001

FUJI POWER MOSFET2SK1006-01MRN-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-220F15Low on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulators2.54UPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECSC-67EIAJEquivalent circuit schematicMax

 8.4. Size:73K  fuji
 2sk1005.pdf

2SK1001

 8.5. Size:127K  fuji
 2sk1006-01m.pdf

2SK1001 2SK1001

 8.6. Size:73K  fuji
 2sk1004.pdf

2SK1001

 8.7. Size:167K  fuji
 2sk1009-01.pdf

2SK1001 2SK1001

 8.8. Size:73K  fuji
 2sk1006.pdf

2SK1001

 8.9. Size:133K  fuji
 2sk1008-01.pdf

2SK1001 2SK1001

 8.10. Size:48K  no
 2sk932 2sk937 2sk968 2sk998 2sk1000.pdf

2SK1001

 8.11. Size:61K  inchange semiconductor
 2sk1007.pdf

2SK1001 2SK1001

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1007 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS= 450V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL

 8.12. Size:265K  inchange semiconductor
 2sk1008.pdf

2SK1001 2SK1001

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK1008DESCRIPTIONDrain Current I =4.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vo

 8.13. Size:200K  inchange semiconductor
 2sk1009.pdf

2SK1001 2SK1001

isc N-Channel MOSFET Transistor 2SK1009DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SVF18NE50PN | OSG65R650FZF | 8N80L-TF3-T

 

 
Back to Top