All MOSFET. 2SK1001 Datasheet

 

2SK1001 Datasheet and Replacement


   Type Designator: 2SK1001
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 22 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: SOT23
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2SK1001 Datasheet (PDF)

 ..1. Size:125K  no
 2sk1001.pdf pdf_icon

2SK1001

 8.1. Size:245K  1
 2sk1007-01.pdf pdf_icon

2SK1001

FUJI POWER MOSFET2SK1007-01N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDEC TO-220ABEIAJ SC-46Equivalent circuit schematicMaxi

 8.2. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf pdf_icon

2SK1001

 8.3. Size:211K  1
 2sk1006-01mr.pdf pdf_icon

2SK1001

FUJI POWER MOSFET2SK1006-01MRN-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-220F15Low on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulators2.54UPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECSC-67EIAJEquivalent circuit schematicMax

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History: 20N03L-TO252 | 2N6762JTXV

Keywords - 2SK1001 MOSFET datasheet

 2SK1001 cross reference
 2SK1001 equivalent finder
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