All MOSFET. 2SK1006-01M Datasheet

 

2SK1006-01M MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1006-01M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: SC67

 2SK1006-01M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1006-01M Datasheet (PDF)

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 2sk1006-01m.pdf

2SK1006-01M 2SK1006-01M

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 2sk1006-01mr.pdf

2SK1006-01M 2SK1006-01M

FUJI POWER MOSFET2SK1006-01MRN-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-220F15Low on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulators2.54UPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECSC-67EIAJEquivalent circuit schematicMax

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 2sk1006.pdf

2SK1006-01M

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 2sk1007-01.pdf

2SK1006-01M 2SK1006-01M

FUJI POWER MOSFET2SK1007-01N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDEC TO-220ABEIAJ SC-46Equivalent circuit schematicMaxi

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2SK1006-01M

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 2sk1005.pdf

2SK1006-01M

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 2sk1004.pdf

2SK1006-01M

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 2sk1009-01.pdf

2SK1006-01M 2SK1006-01M

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 2sk1008-01.pdf

2SK1006-01M 2SK1006-01M

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2SK1006-01M

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 2sk1001.pdf

2SK1006-01M

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 2sk1007.pdf

2SK1006-01M 2SK1006-01M

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1007 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS= 450V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL

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 2sk1008.pdf

2SK1006-01M 2SK1006-01M

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK1008DESCRIPTIONDrain Current I =4.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vo

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 2sk1009.pdf

2SK1006-01M 2SK1006-01M

isc N-Channel MOSFET Transistor 2SK1009DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HM6800 | RU30L15H | RJK6029DJA | RJK2511DPK | HAT1130R

 

 
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