2SK3641 Datasheet and Replacement

SMD Type ICSMD Type MOSFETMOS Field Effect Transistor2SK3641TO-252Unit: mm+0.16.50+0.15 2.30-0.1-0.15Features+0.85.30+0.2 0.50-0.7-0.2Low on-state resistanceRDS(on)1 =14 m MAX. (VGS =10 V, ID =18A)0.127RDS(on)2 =25 m MAX. (VGS =4.5 V, ID =15 A)0.80+0.1 max-0.1Low Ciss: Ciss = 930 pF TYP.2.3 0.60+0.1 1Gate-0.1+0.154.60-0.152Drain3SourceAbsolute

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3642SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3642 is N-channel MOS FET device that features a low PART NUMBER PACKAGE on-state resistance and excellent switching characteristics, and 2SK3642-ZK TO-252 (MP-3ZK)designed for low voltage high current applications such as DC/DC converter with synchronou

2SK3648-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

2SK3649-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un

2SK3646-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

2SK3647-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm)Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsFoot Print Pattern(

2SK3644-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220ABHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

2SK3645-01MR200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un

SMD Type ICSMD Type TransistorsSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICProduct specification2SK3643TO-252Unit: mm+0.16.50+0.15 2.30-0.1-0.15Features+0.85.30+0.2 0.50-0.7-0.2Low on-state resistanceRDS(on)1 =6 m MAX. (VGS =10 V, ID =32A)RDS(on)2 =9 m MAX. (VGS =4.5 V, ID =32 A) 0.12

SMD Type ICSMD Type TransistorsMOS Field Effect Transistor2SK3640TO-252Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1Features+0.25.30-0.2 0.50+0.8-0.7Low on-state resistanceRDS(on)1 =21m MAX. (VGS =10 V, ID =9A)RDS(on)2 =40m MAX. (VGS =4.5 V, ID =9 A)0.1270.80+0.1 max-0.1Low Ciss: Ciss = 570 pF TYP.Built-in gate protection diode1. Gate2.3 0.60+0.1-0.14.60+0.1

isc N-Channel MOSFET Transistor 2SK3646LFEATURESDrain Current : I = 41A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 44m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3646SFEATURESDrain Current : I = 41A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 44m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3648-01FEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc N-Channel MOSFET Transistor 2SK3649-01MRFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

isc N-Channel MOSFET Transistor 2SK3644-01FEATURESDrain Current : I = 41A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 44m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc N-Channel MOSFET Transistor 2SK3645-01MRFEATURESDrain Current : I = 41A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 44m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so