2SK1641 PDF and Equivalents Search

 

2SK1641 Specs and Replacement

Type Designator: 2SK1641

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 620 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TO3PN

2SK1641 substitution

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2SK1641 datasheet

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2SK1641

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2SK1641

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2SK1641

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒

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Detailed specifications: 2SK3635-Z, 2SK3636, 2SK3638, 2SK3639, 2SK3640, 2SK3641, 2SK3643, 2SK1637, 2N7000, 2SK1642, 2SK1643, 2SK1649, 2SK1650, 2SK1651, 2SK1652, 2SK1653, 2SK1658

Keywords - 2SK1641 MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

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