2SK1641 Datasheet and Replacement
Type Designator: 2SK1641
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 620 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: TO3PN
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2SK1641 Datasheet (PDF)
2sk1641.pdf

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2sk1647.pdf

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: FQPF3N80C | HUFA75639S3ST | AO4403 | WSD3042DN56 | IXTB30N100L | SMG2314NE | FS3KM-10
Keywords - 2SK1641 MOSFET datasheet
2SK1641 cross reference
2SK1641 equivalent finder
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History: FQPF3N80C | HUFA75639S3ST | AO4403 | WSD3042DN56 | IXTB30N100L | SMG2314NE | FS3KM-10



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