All MOSFET. 2SK1653 Datasheet

 

2SK1653 Datasheet and Replacement


   Type Designator: 2SK1653
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO220IS
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2SK1653 Datasheet (PDF)

 ..1. Size:366K  toshiba
2sk1653.pdf pdf_icon

2SK1653

www.DataSheet4U.comDownloaded from Elcodis.com electronic components distributor www.DataSheet4U.comDownloaded from Elcodis.com electronic components distributor www.DataSheet4U.comDownloaded from Elcodis.com electronic components distributor www.DataSheet4U.comDownloaded from Elcodis.com electronic components distributor www.DataSheet4U.comDownloaded from Elcodis.com elec

 8.1. Size:237K  renesas
2sk1658.pdf pdf_icon

2SK1653

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:104K  no
2sk1651.pdf pdf_icon

2SK1653

 8.3. Size:1697K  jiangsu
2sk1658.pdf pdf_icon

2SK1653

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFETID V(BR)DSS RDS(on)MAX SOT-323 10@4V30V100mA15@2.5V1. GATE2. SOURCE3. DRAINFEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily

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History: 20N03L-TO252 | 2N6762JTXV

Keywords - 2SK1653 MOSFET datasheet

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