2SK1658 Datasheet and Replacement
Type Designator: 2SK1658
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 45 Ohm
Package: SOT323
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2SK1658 Datasheet (PDF)
2sk1658.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk1658.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFETID V(BR)DSS RDS(on)MAX SOT-323 10@4V30V100mA15@2.5V1. GATE2. SOURCE3. DRAINFEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily
2sk1653.pdf

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History: 2N6761 | IRFIZ44A | MMBF170L | AU7N60S | SVF4N60M | IRFIBC30G | AMD510C
Keywords - 2SK1658 MOSFET datasheet
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History: 2N6761 | IRFIZ44A | MMBF170L | AU7N60S | SVF4N60M | IRFIBC30G | AMD510C



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