All MOSFET. 2SK2030 Datasheet

 

2SK2030 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2030

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm

Package: TO251

2SK2030 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2030 Datasheet (PDF)

1.1. 2sk2030.pdf Size:74K _update

2SK2030
2SK2030



4.1. 2sk2038.pdf Size:198K _toshiba

2SK2030
2SK2030

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.2. 2sk2036.pdf Size:325K _toshiba

2SK2030
2SK2030

2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Unit: mm Analog Switching Applications • High input impedance. • Low gate threshold voltage: V = 0.5~1.5 V th • Excellent switching times: t = 0.28 µs (typ.) on t = 0.34 µs (typ.) off • Small package • Enhancement-mode Marking Equivalent Circuit J

 4.3. 2sk2035.pdf Size:294K _toshiba

2SK2030
2SK2030

2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Unit: mm Analog Switching Applications • High input impedance. • Low gate threshold voltage: V = 0.5~1.5 V th • Excellent switching times: t = 0.16 µs (typ.) on t = 0.15 µs (typ.) off • Small package • Enhancement-mode Marking Equivalent Circuit M

4.4. 2sk2037.pdf Size:298K _toshiba

2SK2030
2SK2030

2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Unit: mm Analog Switching Applications • High input impedance. • Low gate threshold voltage: V = 0.5~1.5 V th • Excellent switching times: t = 0.28 µs (typ.) on t = 0.34 µs (typ.) off • Small package. • Enhancement-mode Marking Equivalent Circuit JEDE

 4.5. 2sk2034.pdf Size:398K _toshiba

2SK2030
2SK2030

2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Unit: mm Analog Switch Applications • High input impedance. • Low gate threshold voltage.: V = 0.5~1.5 V th • Excellent switching times: t = 0.16 µs (typ.) on t = 0.15 µs (typ.) off • Small package. • Enhancement-mode Marking Equivalent Circuit JE

4.6. 2sk2033.pdf Size:295K _toshiba

2SK2030
2SK2030

2SK2033 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2033 High Speed Switching Applications Unit: mm Analog Switch Applications • High input impedance. • Low gate threshold voltage: V = 0.5~1.5 V th • Excellent switching times: t = 0.16 µs (typ.) on t = 0.15 µs (typ.) off • Small package. • Enhancement-mode Marking Equivalent Circuit JED

4.7. 2sk2039.pdf Size:312K _toshiba

2SK2030
2SK2030



4.8. 2sk2032.pdf Size:31K _panasonic

2SK2030
2SK2030

Power F-MOS FETs 2SK2032 2SK2032 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed : EAS > 200mJ 15.0 0.3 5.0 0.2 VGSS=30V guaranteed 11.0 0.2 3.2 High-speed switching : tf= 90ns o3.2 0.1 No secondary breakdown Applications 2.0 0.2 2.0 0.1 Non-contact relay 1.1 0.1 0.6 0.2 Solenoid drive 5.45 0.3 Motor drive 10.9 0.5 Control e

4.9. 2sk2033-3.pdf Size:1082K _kexin

2SK2030
2SK2030

SMD Type MOSFET N-Channel MOSFET 2SK2033 SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 20V ● ID = 100mA 1 2 ● RDS(ON) < 12Ω (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● Low threshold voltage: Vth = 0.5~1.5 V 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Sou

4.10. 2sk2033.pdf Size:830K _kexin

2SK2030
2SK2030

SMD Type MOSFET N-Channel MOSFET 2SK2033 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 20V ● ID = 100mA 1 2 +0.1 ● RDS(ON) < 12Ω (VGS = 2.5V) +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 ● Low threshold voltage: Vth = 0.5~1.5 V 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source

Datasheet: 2SK1642 , 2SK1643 , 2SK1649 , 2SK1650 , 2SK1651 , 2SK1652 , 2SK1653 , 2SK1658 , 75339P , 2SK2043 , 2SK2044 , 2SK2044LS , 2SK2045 , 2SK2045LS , 2SK2052-R , 2SK2054C , 2SK2057 .

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