All MOSFET. 2SK3219-01MR Datasheet

 

2SK3219-01MR MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3219-01MR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: TO220F

 2SK3219-01MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3219-01MR Datasheet (PDF)

 ..1. Size:147K  fuji
2sk3219-01mr.pdf

2SK3219-01MR 2SK3219-01MR

FUJI POWER MOS-FET2SK3219-01MRN-CHANNEL SILICON POWER MOS-FET FeaturesTO-220F15High speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators2.54 UPS (Uninterruptible Power Supply) DC-DC converters3. SourceMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25

 7.1. Size:279K  inchange semiconductor
2sk3219.pdf

2SK3219-01MR 2SK3219-01MR

isc N-Channel MOSFET Transistor 2SK3219FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 43m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.1. Size:149K  1
2sk3218-01.pdf

2SK3219-01MR 2SK3219-01MR

FUJI POWER MOS-FET2SK3218-01N-CHANNEL SILICON POWER MOS-FETTO-220AB FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unles

 8.2. Size:147K  1
2sk3217-01mr.pdf

2SK3219-01MR 2SK3219-01MR

FUJI POWER MOS-FET2SK3217-01MRN-CHANNEL SILICON POWER MOS-FETTO-220F15 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications2.54 Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25

 8.3. Size:27K  1
2sk3215.pdf

2SK3219-01MR 2SK3219-01MR

2SK3215Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-764(Z)Target Specification 1st. EditionDec. 1998Features Low on-resistanceRDS = 350m typ. High speed switching 4V gate drive device can be driven from 5V sourceOutlineTO220ABDG1. Gate12. Drain(Flange23. Source3S2SK3215Absolute Maximum Ratings (Ta = 25C)Item Symbol

 8.4. Size:146K  1
2sk3216-01.pdf

2SK3219-01MR 2SK3219-01MR

FUJI POWER MOS-FET2SK3216-01N-CHANNEL SILICON POWER MOS-FETTO-220AB FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unles

 8.5. Size:94K  renesas
2sk3211.pdf

2SK3219-01MR 2SK3219-01MR

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS = 60 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)) (Package name: LDPAK(S)-

 8.6. Size:104K  renesas
rej03g1092 2sk3212ds.pdf

2SK3219-01MR 2SK3219-01MR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:108K  renesas
rej03g1091 2sk3211lsds.pdf

2SK3219-01MR 2SK3219-01MR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:157K  renesas
2sk3210.pdf

2SK3219-01MR 2SK3219-01MR

2SK3210(L), 2SK3210(S)Silicon N Channel MOS FETHigh Speed Power SwitchingREJ03G0414-0300(Previous ADE-208-760A (Z))Rev.3.00Sep. 30, 2004Features Low on-resistanceRDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V sourceOutlineLDPAKD4 41. Gate2. DrainG3. Source4. Drain123123SAbsolute Maximum Rating

 8.9. Size:94K  renesas
2sk3212.pdf

2SK3219-01MR 2SK3219-01MR

2SK3212 Silicon N Channel MOS FET High Speed Power Switching REJ03G1092-0300 (Previous: ADE-208-752A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23

 8.10. Size:164K  renesas
r07ds0409ej 2sk3210ls.pdf

2SK3219-01MR 2SK3219-01MR

Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400(Previous: REJ03G0414-0300)Silicon N Channel MOS FET Rev.4.00High Speed Power Switching May 16, 2011Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

 8.11. Size:205K  panasonic
2sk321.pdf

2SK3219-01MR 2SK3219-01MR

 8.12. Size:28K  hitachi
2sk3214.pdf

2SK3219-01MR 2SK3219-01MR

2SK3214Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-763(Z)Target Specification1st. EditionDecember 1998Features Low on-resistanceRDS =130m typ. High speed switching 4V gate drive device can be driven from 5V sourceOutlineTO220ABDG1. Gate12. Drain(Flange)23. Source3S2SK3214Absolute Maximum Ratings (Ta = 25 C)Item S

 8.13. Size:288K  inchange semiconductor
2sk3216.pdf

2SK3219-01MR 2SK3219-01MR

isc N-Channel MOSFET Transistor 2SK3216FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.14. Size:357K  inchange semiconductor
2sk3210s.pdf

2SK3219-01MR 2SK3219-01MR

isc N-Channel MOSFET Transistor 2SK3210SFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.15. Size:283K  inchange semiconductor
2sk3210l.pdf

2SK3219-01MR 2SK3219-01MR

isc N-Channel MOSFET Transistor 2SK3210LFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.16. Size:279K  inchange semiconductor
2sk3212.pdf

2SK3219-01MR 2SK3219-01MR

isc N-Channel MOSFET Transistor 2SK3212FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.17. Size:289K  inchange semiconductor
2sk3214.pdf

2SK3219-01MR 2SK3219-01MR

isc N-Channel MOSFET Transistor 2SK3214FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 170m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.18. Size:357K  inchange semiconductor
2sk3211s.pdf

2SK3219-01MR 2SK3219-01MR

isc N-Channel MOSFET Transistor 2SK3211SFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.19. Size:289K  inchange semiconductor
2sk3215.pdf

2SK3219-01MR 2SK3219-01MR

isc N-Channel MOSFET Transistor 2SK3215FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.20. Size:289K  inchange semiconductor
2sk3218.pdf

2SK3219-01MR 2SK3219-01MR

isc N-Channel MOSFET Transistor 2SK3218FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 43m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.21. Size:283K  inchange semiconductor
2sk3211l.pdf

2SK3219-01MR 2SK3219-01MR

isc N-Channel MOSFET Transistor 2SK3211LFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.22. Size:279K  inchange semiconductor
2sk3217.pdf

2SK3219-01MR 2SK3219-01MR

isc N-Channel MOSFET Transistor 2SK3217FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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