All MOSFET. 2SK3219-01MR Datasheet

 

2SK3219-01MR MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3219-01MR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 95 nS

Drain-Source Capacitance (Cd): 550 pF

Maximum Drain-Source On-State Resistance (Rds): 0.043 Ohm

Package: TO220F

2SK3219-01MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3219-01MR Datasheet (PDF)

1.1. 2sk3219-01mr.pdf Size:147K _update

2SK3219-01MR
2SK3219-01MR

FUJI POWER MOS-FET 2SK3219-01MR N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25

4.1. 2sk3210.pdf Size:157K _renesas

2SK3219-01MR
2SK3219-01MR

2SK3210(L), 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G0414-0300 (Previous ADE-208-760A (Z)) Rev.3.00 Sep. 30, 2004 Features • Low on-resistance RDS = 40 m? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Absolute Maximum Ratings (Ta = 25

4.2. r07ds0409ej 2sk3210ls.pdf Size:164K _renesas

2SK3219-01MR
2SK3219-01MR

Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Silicon N Channel MOS FET Rev.4.00 High Speed Power Switching May 16, 2011 Features • Low on-resistance RDS = 40 m? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package

4.3. rej03g1092 2sk3212ds.pdf Size:104K _renesas

2SK3219-01MR
2SK3219-01MR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. 2sk3212.pdf Size:94K _renesas

2SK3219-01MR
2SK3219-01MR

2SK3212 Silicon N Channel MOS FET High Speed Power Switching REJ03G1092-0300 (Previous: ADE-208-752A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =0.1 ? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3 Rev.3.00 S

4.5. 2sk3211.pdf Size:94K _renesas

2SK3219-01MR
2SK3219-01MR

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 60 m? typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L)) (Package name: LDPAK(S)-(1)) 4 D

4.6. rej03g1091 2sk3211lsds.pdf Size:108K _renesas

2SK3219-01MR
2SK3219-01MR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. 2sk321.pdf Size:205K _panasonic

2SK3219-01MR
2SK3219-01MR

4.8. 2sk3214.pdf Size:28K _hitachi

2SK3219-01MR
2SK3219-01MR

2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763(Z) Target Specification 1st. Edition December 1998 Features • Low on-resistance RDS =130mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1. Gate 1 2. Drain(Flange) 2 3. Source 3 S 2SK3214 Absolute Maximum Ratings (Ta = 25° C) Item S

Datasheet: 2SK2084S , 2SK2088 , 2SK2089 , 2SK319 , 2SK3192 , 2SK320 , 2SK3203L , 2SK3203S , J112 , 2SK3221 , 2SK3224 , 2SK3225-Z , 2SK1008 , 2SK1008-01 , 2SK1009-01 , 2SK1010-01 , 2SK1572 .

 


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