2SK3219-01MR MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3219-01MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 550 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: TO220F
2SK3219-01MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3219-01MR Datasheet (PDF)
2sk3219-01mr.pdf
FUJI POWER MOS-FET2SK3219-01MRN-CHANNEL SILICON POWER MOS-FET FeaturesTO-220F15High speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators2.54 UPS (Uninterruptible Power Supply) DC-DC converters3. SourceMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25
2sk3219.pdf
isc N-Channel MOSFET Transistor 2SK3219FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 43m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3218-01.pdf
FUJI POWER MOS-FET2SK3218-01N-CHANNEL SILICON POWER MOS-FETTO-220AB FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unles
2sk3217-01mr.pdf
FUJI POWER MOS-FET2SK3217-01MRN-CHANNEL SILICON POWER MOS-FETTO-220F15 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications2.54 Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25
2sk3215.pdf
2SK3215Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-764(Z)Target Specification 1st. EditionDec. 1998Features Low on-resistanceRDS = 350m typ. High speed switching 4V gate drive device can be driven from 5V sourceOutlineTO220ABDG1. Gate12. Drain(Flange23. Source3S2SK3215Absolute Maximum Ratings (Ta = 25C)Item Symbol
2sk3216-01.pdf
FUJI POWER MOS-FET2SK3216-01N-CHANNEL SILICON POWER MOS-FETTO-220AB FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unles
2sk3211.pdf
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS = 60 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)) (Package name: LDPAK(S)-
rej03g1092 2sk3212ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1091 2sk3211lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3210.pdf
2SK3210(L), 2SK3210(S)Silicon N Channel MOS FETHigh Speed Power SwitchingREJ03G0414-0300(Previous ADE-208-760A (Z))Rev.3.00Sep. 30, 2004Features Low on-resistanceRDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V sourceOutlineLDPAKD4 41. Gate2. DrainG3. Source4. Drain123123SAbsolute Maximum Rating
2sk3212.pdf
2SK3212 Silicon N Channel MOS FET High Speed Power Switching REJ03G1092-0300 (Previous: ADE-208-752A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23
r07ds0409ej 2sk3210ls.pdf
Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400(Previous: REJ03G0414-0300)Silicon N Channel MOS FET Rev.4.00High Speed Power Switching May 16, 2011Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
2sk3214.pdf
2SK3214Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-763(Z)Target Specification1st. EditionDecember 1998Features Low on-resistanceRDS =130m typ. High speed switching 4V gate drive device can be driven from 5V sourceOutlineTO220ABDG1. Gate12. Drain(Flange)23. Source3S2SK3214Absolute Maximum Ratings (Ta = 25 C)Item S
2sk3216.pdf
isc N-Channel MOSFET Transistor 2SK3216FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3210s.pdf
isc N-Channel MOSFET Transistor 2SK3210SFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3210l.pdf
isc N-Channel MOSFET Transistor 2SK3210LFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3212.pdf
isc N-Channel MOSFET Transistor 2SK3212FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3214.pdf
isc N-Channel MOSFET Transistor 2SK3214FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 170m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3211s.pdf
isc N-Channel MOSFET Transistor 2SK3211SFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3215.pdf
isc N-Channel MOSFET Transistor 2SK3215FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3218.pdf
isc N-Channel MOSFET Transistor 2SK3218FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 43m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3211l.pdf
isc N-Channel MOSFET Transistor 2SK3211LFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3217.pdf
isc N-Channel MOSFET Transistor 2SK3217FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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