2SK1574 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1574
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220AB
2SK1574 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1574 Datasheet (PDF)
2sk1574.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1574 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYM
2sk1578.pdf
Ordering number:EN4178AN-Channel Junction FET2SK1578Capacitor Microphone ApplicationsFeatures Package Dimensions Especially suited for use in audio, telephone capaci-unit:mmtor microphones.2034A Excellent voltage characteristics.[2SK1578] Excellent transient characteristics.2.24.0 Adoption of FBET process.0.40.50.40.41 2 31 : Source1.3 1.3
2sk1573.pdf
2SK1573 Silicon N Channel MOS FET REJ03G0955-0200 (Previous: ADE-208-1295) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D
rej03g0955 2sk1573ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk1572.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk1579.pdf
2SK1579 Silicon N Channel MOS FET REJ03G0956-0200 (Previous: ADE-208-1296) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Suitable for low voltage operation Outline RENESAS Package code: PLZZ0004CA-A(Package name: UPAK R )D12 1. Gate32. DrainG 3. Source44. DrainSNote: Markin
2sk1570.pdf
isc N-Channel MOSFET Transistor 2SK1570DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
2sk1571.pdf
isc N-Channel MOSFET Transistor 2SK1571DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STP5N80
History: STP5N80
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