All MOSFET. 2SK1602 Datasheet

 

2SK1602 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1602

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2.8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 60 pF

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO220F

2SK1602 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK1602 Datasheet (PDF)

1.1. 2sk1602.pdf Size:673K _update

2SK1602
2SK1602



4.1. 2sk1601.pdf Size:81K _update

2SK1602
2SK1602



4.2. 2sk1600.pdf Size:673K _update

2SK1602
2SK1602

查询2sk160供应商

4.3. 2sk1603.pdf Size:55K _update

2SK1602



4.4. 2sk160a.pdf Size:390K _update

2SK1602
2SK1602

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.5. 2sk1607.pdf Size:36K _panasonic

2SK1602
2SK1602

Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS Unit : mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 0.1 5.45 0.3 0.6 0.

4.6. 2sk1606.pdf Size:36K _panasonic

2SK1602
2SK1602

Power F-MOS FETs 2SK1606 2SK1606 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 For high-frequency power amplification 1.4 0.1 +0.2 0.5 -0.1 0.8 0.1 Abso

4.7. 2sk1609.pdf Size:36K _panasonic

2SK1602
2SK1602

Power F-MOS FETs 2SK1609 2SK1609 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) For high-frequency power amplification 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 Absolute Maxim

4.8. 2sk1605.pdf Size:36K _panasonic

2SK1602
2SK1602

Power F-MOS FETs 2SK1605 2SK1605 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 For high-frequency power amplification 1.4 0.1 +0.2 0.5 -0.1 0.8 0.1 Abso

4.9. 2sk1608.pdf Size:36K _panasonic

2SK1602
2SK1602

Power F-MOS FETs 2SK1608 2SK1608 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) For high-frequency power amplification 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 Absolute Maxim

Datasheet: 2SK1008-01 , 2SK1009-01 , 2SK1010-01 , 2SK1572 , 2SK1574 , 2SK1590C , 2SK1600 , 2SK1601 , IRFZ44A , 2SK1603 , 2SK160A , 2SK1626 , 2SK1627 , 2SK1629-E1-E , 2SK1660 , 2SK1662M , 2SK1681 .

 


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MOSFET: 2SK3609-01 | 2SK3608-01SJ | 2SK3608-01S | 2SK3608-01L | 2SK3606-01 | 2SK3605-01 | 2SK3604-01SJ | 2SK3604-01S | 2SK3604-01L | 2SK3603-01MR | 2SK3602-01 | 2SK3601-01 | 2SK3600-01SJ | 2SK3600-01S | 2SK3600-01L |