2SK1683 Datasheet and Replacement
Type Designator: 2SK1683
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
tonⓘ - Turn-on Time: 45 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO3PF
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2SK1683 Datasheet (PDF)
2sk168.pdf
2SK168Silicon N-Channel Junction FETApplicationVHF Amplifier, Mixer, Local oscillatorOutlineTO-92 (2)1. Gate2. Source3. Drain3212SK168Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 30 VGate to source voltage VGSS 1 VGate current IG 10 mADrain current ID 20 mAChannel power dissipation Pch 200 mWChannel temper
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRF610LPBF | IPI47N10S-33 | 2SK3456 | SVF1N60AD | IRFZ48RS | AFN6424S | WSD30L30DN
Keywords - 2SK1683 MOSFET datasheet
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History: IRF610LPBF | IPI47N10S-33 | 2SK3456 | SVF1N60AD | IRFZ48RS | AFN6424S | WSD30L30DN
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