2SK17 Datasheet and Replacement

Databook.fxp 1/14/99 2:03 PM Page D-2D-2 01/99Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK17 2SK40 2SK59 2SK105JapaneseIFN17 IFN40 IFN59 IFN105InterFETNJ16 NJ16 NJ16 NJ16ProcessUnit N N N NParameters Conditions Limit Channel Channel Channel ChannelVBVGSS IG = 1.0 A 20 50 30 50MinnA 0.10 1.0 1.0 1.0IGSS VGS = ( )

Databook.fxp 1/14/99 2:03 PM Page D-2D-2 01/99Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK17 2SK40 2SK59 2SK105JapaneseIFN17 IFN40 IFN59 IFN105InterFETNJ16 NJ16 NJ16 NJ16ProcessUnit N N N NParameters Conditions Limit Channel Channel Channel ChannelVBVGSS IG = 1.0 A 20 50 30 50MinnA 0.10 1.0 1.0 1.0IGSS VGS = ( )

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1712External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 10 V I 500 nA V = 10VGSS GSS GSI 15 A I 250 A V = 60V, V = 0VD DSS DS GSI V 1.0 2.0 V V = 10V, I = 250AD (pulse) 60 (Tch 150

2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Unit in mm Output Power : Po 90 W (Min.) Drain Efficiency : = 50% (Typ.) D Frequency : f = 770 MHz Push-Pull Structure Package MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITDrain-Source Voltage VDSS 80 VGate-Sourc

2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications Unit: mm Superior inter modulation performance. Low noise figure: NF = 1.0dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 12.5 VGate-source voltage VGS 8 VDrain current ID 30 mADrain power

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2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage: VGDS = -40 V Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz)

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Ordering number:EN3824N-Channel Silicon MOSFET2SK1729Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SK1729]2.5 Meets radial taping.1.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum

Ordering number:EN3825N-Channel Silicon MOSFET2SK1730Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SK1730]2.5 Meets radial taping.1.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum

Ordering number:EN3833N-Channel Silicon MOSFET2SK1738Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SK1738]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 Meets radial taping. 1.41.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5 SANYO

Ordering number:EN4112N-Channel Junction Silicon FET2SK1740HF amplifiers low frequency amplifiersanalog switchesFeatures Package Dimensions Adoption of FBET process.unit:mm Largeyfs.2050A Small Ciss.[2SK1740] Small-sized package permitting 2SK1740-applied0.40.16sets to be made small and slim.30 to 0.11 0.95 20.951.92.91 : Source2 :

Ordering number:EN3832N-Channel Silicon MOSFET2SK1737Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SK1737]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 Meets radial taping. 1.41.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5 SANYO

Ordering number:EN3831N-Channel Silicon MOSFET2SK1736Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SK1736]2.51.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CPa

Ordering number:EN3822N-Channel Silicon MOSFET2SK1727Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SK1727]2.5 Meets radial taping.1.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum

Ordering number:EN3826N-Channel Silicon MOSFET2SK1731Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SK1731]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5SANY

Ordering number:EN3820N-Channel Silicon MOSFET2SK1725Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SK1725]2.5 Meets radial taping.1.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum

Ordering number:EN3828N-Channel Silicon MOSFET2SK1733Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SK1733]2.5 Meets radial taping.1.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum

Ordering number:EN3830N-Channel Silicon MOSFET2SK1735Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SK1735]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5SANY

Ordering number:EN3819N-Channel Silicon MOSFET2SK1724Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK1724]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParamete

Ordering number:EN3823N-Channel Silicon MOSFET2SK1728Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK1728]4.51.51.60.40.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParamet

Ordering number:EN3829N-Channel Silicon MOSFET2SK1734Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SK1734]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5 SANYO

Ordering number:EN3827N-Channel Silicon MOSFET2SK1732Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SK1732]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5 SANYO

2SK1762 Silicon N Channel MOS FET REJ03G0969-0200 (Previous: ADE-208-1316) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D

2SK1775 Silicon N Channel MOS FET REJ03G0973-0200 (Previous: ADE-208-1320) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D

2SK1764 Silicon N Channel MOS FET REJ03G0970-0200 (Previous: ADE-208-1317) Rev.2.00 Sep 07, 2005 Application Low frequency amplifier High speed switching Features Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PLZZ0004C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1773 Silicon N Channel MOS FET REJ03G0972-0200 (Previous: ADE-208-1319) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1.

2SK1772Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid driveOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SK1772Absolute Ma

2SK1761Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converterOutlineTO-220AB1D231. GateG2. Drain(Flange)3. SourceS2SK1761Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrai

2SK1717www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

isc N-Channel MOSFET Transistor 2SK1707DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

isc N-Channel MOSFET Transistor 2SK1706DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

isc N-Channel MOSFET Transistor 2SK1705DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Power supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain

isc N-Channel MOSFET Transistor 2SK1710DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

isc N-Channel MOSFET Transistor 2SK1701DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor 2SK1709DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

isc N-Channel MOSFET Transistor 2SK1703DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor 2SK1745DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

isc N-Channel MOSFET Transistor 2SK1767DESCRIPTIONDrain Current I = 3.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

isc N-Channel MOSFET Transistor 2SK1723DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sou

isc N-Channel MOSFET Transistor 2SK1708DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

isc N-Channel MOSFET Transistor 2SK1700DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1766 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage : VDSS= 250V(Min) Fast Switching Speed APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS

isc N-Channel MOSFET Transistor 2SK1704DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS