All MOSFET. 2SK1774 Datasheet

 

2SK1774 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1774

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 230 nS

Drain-Source Capacitance (Cd): 1150 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO3P

2SK1774 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1774 Datasheet (PDF)

1.1. 2sk1774.pdf Size:61K _update

2SK1774
2SK1774



4.1. 2sk1776 2sk1778.pdf Size:78K _update

2SK1774



4.2. 2sk1771.pdf Size:305K _toshiba

2SK1774
2SK1774

2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications Unit: mm Superior inter modulation performance. Low noise figure: NF = 1.0dB (typ.) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V Gate-source voltage VGS 8 V Drain current ID 30 mA Drain power dissipat

4.3. 2sk1773.pdf Size:81K _renesas

2SK1774
2SK1774

2SK1773 Silicon N Channel MOS FET REJ03G0972-0200 (Previous: ADE-208-1319) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2.

4.4. rej03g0973 2sk1775ds.pdf Size:95K _renesas

2SK1774
2SK1774

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.5. 2sk1775.pdf Size:82K _renesas

2SK1774
2SK1774

2SK1775 Silicon N Channel MOS FET REJ03G0973-0200 (Previous: ADE-208-1320) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D 1. Gate G 2

4.6. 2sk1772.pdf Size:43K _hitachi

2SK1774
2SK1774

2SK1772 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S 2SK1772 Absolute Ma

Datasheet: 2SK1746 , 2SK1748-Z , 2SK1750-Z , 2SK1751-Z , 2SK1766 , 2SK1767 , 2SK1768 , 2SK1769 , BS170 , 2SK1776 , 2SK1778 , 2SK1792 , 2SK1793-Z , 2SK3022 , 2SK3030 , 2SK3031 , 2SK3043 .

 


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