All MOSFET. 2SK1776 Datasheet

 

2SK1776 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1776
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO220FM

 2SK1776 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1776 Datasheet (PDF)

 ..1. Size:78K  hitachi
2sk1776 2sk1778.pdf

2SK1776

 8.1. Size:305K  toshiba
2sk1771.pdf

2SK1776
2SK1776

2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications Unit: mm Superior inter modulation performance. Low noise figure: NF = 1.0dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 12.5 VGate-source voltage VGS 8 VDrain current ID 30 mADrain power

 8.2. Size:82K  renesas
2sk1775.pdf

2SK1776
2SK1776

2SK1775 Silicon N Channel MOS FET REJ03G0973-0200 (Previous: ADE-208-1320) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D

 8.3. Size:95K  renesas
rej03g0973 2sk1775ds.pdf

2SK1776
2SK1776

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:81K  renesas
2sk1773.pdf

2SK1776
2SK1776

2SK1773 Silicon N Channel MOS FET REJ03G0972-0200 (Previous: ADE-208-1319) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1.

 8.5. Size:43K  hitachi
2sk1772.pdf

2SK1776
2SK1776

2SK1772Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid driveOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SK1772Absolute Ma

 8.6. Size:61K  hitachi
2sk1774.pdf

2SK1776
2SK1776

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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