2SK1347 Specs and Replacement
Type Designator: 2SK1347
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 620 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO220AB
2SK1347 substitution
- MOSFET ⓘ Cross-Reference Search
2SK1347 datasheet
2sk1342.pdf
2SK1342 Silicon N Channel MOS FET REJ03G0939-0200 (Previous ADE-208-1279) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D ... See More ⇒
rej03g0939 2sk1342ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sk1341.pdf
2SK1341 Silicon N Channel MOS FET REJ03G0938-0200 (Previous ADE-208-1278) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D ... See More ⇒
Detailed specifications: 2SK3048, 2SK3049, 2SK3050, 2SK1331, 2SK1333, 2SK1344, 2SK1345, 2SK1346, IRFP250N, 2SK1348, 2SK1349, 2SK1350, 2SK1351, 2SK1352, 2SK1357, 2SK2664, 2SK2665
Keywords - 2SK1347 MOSFET specs
2SK1347 cross reference
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2SK1347 substitution
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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