2SK1357 Datasheet and Replacement
Type Designator: 2SK1357
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO247AD
2SK1357 substitution
2SK1357 Datasheet (PDF)
2sk1357.pdf
isc N-Channel MOSFET Transistor 2SK1357DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vol
2sk1359.pdf
2SK1359 .5TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) 2SK1359 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1
2sk1358.pdf
TOSHIBADiscrete Semiconductors 2SK1358Industrial Applications Unit in mmField Effect TransistorSilicon N Channel MOS Type ( -MOS II.5)High Speed, High Current DC-DC Converter,Relay Drive and Motor Drive ApplicationsFeatures Low Drain-Source ON Resistance- RDS(ON) = 1.1 (Typ.) High Forward Transfer Admittance- Yfs = 4.0S (Typ.) Low Leakage Current-
Datasheet: 2SK1345 , 2SK1346 , 2SK1347 , 2SK1348 , 2SK1349 , 2SK1350 , 2SK1351 , 2SK1352 , 2N7002 , 2SK2664 , 2SK2665 , 2SK2666 , 2SK2667 , 2SK2669 , 2SK2670 , 2SK2672 , 2SK2673 .
History: RUH3025M3
Keywords - 2SK1357 MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: RUH3025M3
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