All MOSFET. 2SK4006-01L Datasheet

 

2SK4006-01L MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK4006-01L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.58 Ohm
   Package: TO262

 2SK4006-01L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK4006-01L Datasheet (PDF)

 4.1. Size:442K  fuji
 2sk4006-01s-l-sj.pdf

2SK4006-01L 2SK4006-01L

SPECIFICATIONDevice Name : Power MOSFETType Name : 2SK4006-01L,S,SJSpec. No. :MS5F6095Date :Apr.-11-2005Fuji Electric Device Technology Co.,Ltd.Matsumoto FactoryNAMEDATE APPROVEDFuji Electric Device Technology Co.,Ltd.DRAWNApr.-11-'05CHECKEDApr.-11-'05MS5F6095 1 / 21CHECKEDApr.-11-'05H04-004-05This datasheet has been downloaded from http://www.digchip.com

 8.1. Size:742K  toshiba
 2sk4002.pdf

2SK4006-01L 2SK4006-01L

2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4002 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm MAX Low drain-source ON-resistance : RDS (ON) = 4.2 (typ.) High forward transfer admittance : |Yfs| = 1.7 S (typ.) Low leakage current : IDSS = 100 A (max)

 8.2. Size:173K  toshiba
 2sk4003.pdf

2SK4006-01L 2SK4006-01L

2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm MAX Low drain-source ON-resistance : RDS (ON) = 1.7 (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0~4.0 V (VDS =

 8.3. Size:200K  hitachi
 2sk400.pdf

2SK4006-01L 2SK4006-01L

 8.4. Size:279K  inchange semiconductor
 2sk4005-01mr.pdf

2SK4006-01L 2SK4006-01L

isc N-Channel MOSFET Transistor 2SK4005-01MRFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 8.5. Size:354K  inchange semiconductor
 2sk4002.pdf

2SK4006-01L 2SK4006-01L

isc N-Channel MOSFET Transistor 2SK4002FEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.6. Size:280K  inchange semiconductor
 2sk4004-01mr.pdf

2SK4006-01L 2SK4006-01L

isc N-Channel MOSFET Transistor 2SK4004-01MRFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 8.7. Size:354K  inchange semiconductor
 2sk4003.pdf

2SK4006-01L 2SK4006-01L

isc N-Channel MOSFET Transistor 2SK4003FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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