2SK2360-Z PDF and Equivalents Search

 

2SK2360-Z Specs and Replacement

Type Designator: 2SK2360-Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO263

2SK2360-Z substitution

- MOSFET ⓘ Cross-Reference Search

 

2SK2360-Z datasheet

 7.1. Size:90K  nec
2sk2359 2sk2360.pdf pdf_icon

2SK2360-Z

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2359/2SK2360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel (in millimeters) MOS Field Effect Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 0.2 1.3 0.2 10.0 FEATURES Low On-Resistance 4 2SK2359 RDS(o... See More ⇒

 8.1. Size:86K  nec
2sk2369 2sk2370.pdf pdf_icon

2SK2360-Z

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 3.0 0.2 FEATURES 4.7 MAX. 15.7 MAX 1.5 Low On-Resistance 2SK2369 RDS(on) = 0.35 (VGS = 10 V, ID = 1... See More ⇒

 8.2. Size:99K  nec
2sk2367 2sk2368.pdf pdf_icon

2SK2360-Z

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor (in millimeter) designed for high voltage switching applications. 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 FEATURES 4 Low On-Resistance 2SK2367 RDS (on) = 0.5 (VGS = 10 V, ID = 8.0 A)... See More ⇒

 8.3. Size:85K  nec
2sk2361 2sk2362.pdf pdf_icon

2SK2360-Z

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2361/2SK2362 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor (in millimeter) designed for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance 4 2SK2361 RDS (on) = 0.9 (VGS = 10 V, ID = 5.0 A) ... See More ⇒

Detailed specifications: 2SK1159, 2SK1163, 2SK1164, 2SK1169, 2SK2351, 2SK2359, 2SK2359-Z, 2SK2360, EMB04N03H, 2SK2361, 2SK2362, 2SK2365, 2SK2365-Z, 2SK2366, 2SK2366-Z, 2SK2371, 2SK2372

Keywords - 2SK2360-Z MOSFET specs

 2SK2360-Z cross reference

 2SK2360-Z equivalent finder

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 2SK2360-Z replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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