All MOSFET. 2SK2362 Datasheet

 

2SK2362 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2362

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 24 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO3P

2SK2362 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK2362 Datasheet (PDF)

1.1. 2sk2361_2sk2362.pdf Size:85K _update

2SK2362
2SK2362

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2361/2SK2362 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor (in millimeter) designed for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2±0.2 1.5 • Low On-Resistance 4 2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A)

4.1. 2sk2359_2sk2360.pdf Size:90K _update

2SK2362
2SK2362

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2359/2SK2360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel (in millimeters) MOS Field Effect Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 ± 0.2 1.3 ± 0.2 10.0 FEATURES • Low On-Resistance 4 2SK2359: RDS(o

4.2. 2sk2365-z_2sk2366-z.pdf Size:90K _update

2SK2362
2SK2362

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel (in millimeters) MOS Field Effect Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 ± 0.2 1.3 ± 0.2 10.0 FEATURES • Low On-Resistance 2SK2365: RDS(on)

4.3. 2sk2369_2sk2370.pdf Size:86K _nec

2SK2362
2SK2362

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. φ 3.0 ± 0.2 FEATURES 4.7 MAX. 15.7 MAX 1.5 • Low On-Resistance 2SK2369: RDS(on) = 0.35 Ω (VGS = 10 V, ID = 1

4.4. 2sk2367_2sk2368.pdf Size:99K _nec

2SK2362
2SK2362

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor (in millimeter) designed for high voltage switching applications. 4.7 MAX. 15.7 MAX. 3.2±0.2 1.5 FEATURES 4 • Low On-Resistance 2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 8.0 A)

Datasheet: 2SK1164 , 2SK1169 , 2SK2351 , 2SK2359 , 2SK2359-Z , 2SK2360 , 2SK2360-Z , 2SK2361 , IRF630A , 2SK2365 , 2SK2365-Z , 2SK2366 , 2SK2366-Z , 2SK2371 , 2SK2372 , 2SK2386 , 2SK2388 .

 


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