All MOSFET. 2SK3272-01SJ Datasheet

 

2SK3272-01SJ MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3272-01SJ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 135 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 200 nS

Drain-Source Capacitance (Cd): 1250 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm

Package: TO263

2SK3272-01SJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3272-01SJ Datasheet (PDF)

1.1. 2sk3272-01sj-01s-01l.pdf Size:355K _update

2SK3272-01SJ
2SK3272-01SJ

2SK3272-01L,S,SJ 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof See to P4 Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise s

4.1. 2sk3277.pdf Size:217K _update

2SK3272-01SJ
2SK3272-01SJ

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3277 Silicon N-channel power MOSFET Unit: mm 6.5±0.1 ■ Features 2.3±0.1 5.3±0.1 4.35±0.1 • Avalanche energy capability guaranteed 0.5±0.1 • High-speed switching • No secondary breakdown ■ Applications 1.0±0.1 • Non-contact relay 0.1±0.05 0.5±0.1 • Solenoid drive 0.75±0.1 2.

4.2. 2sk3278.pdf Size:30K _sanyo

2SK3272-01SJ
2SK3272-01SJ

Ordering number : ENN6680 2SK3278 N-Channel Silicon MOSFET 2SK3278 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit : mm 4V drive. 2083B Ultrahigh-speed switching. [2SK3278] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SK3278] 6.5 2.3 5.0 0.5 4 0.5 0.8

 4.3. rej03g1098 2sk3274lsds.pdf Size:140K _renesas

2SK3272-01SJ
2SK3272-01SJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. 2sk3274.pdf Size:127K _renesas

2SK3272-01SJ
2SK3272-01SJ

2SK3274 (L), 2SK3274 (S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1098-0300 Rev.3.00 May 15, 2006 Features Low on-resistance RDS (on) = 10 m? typ. 4.5 V gate drive device High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(2) ) (Package name: DPAK (S) ) 4 D 2 4 1. Gate 1

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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