2SK3298 PDF and Equivalents Search

 ..1. Size:226K  renesas
 2sk3298.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 0.1. Size:291K  renesas
 2sk3298b.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:422K  toshiba
 2sk3296.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3296 TO-220AB designed for low voltage high current applications such as 2SK3296-S TO-262 DC/DC converter wit... See More ⇒

 8.2. Size:33K  sanyo
 2sk3292.pdf

Ordering number ENN6414 N-Channel Silicon MOSFET 2SK3292 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3292] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C P... See More ⇒

 8.3. Size:42K  sanyo
 2sk3293.pdf

Ordering number ENN6345 N-Channel Silicon MOSFET 2SK3293 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3293] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C P... See More ⇒

 8.4. Size:34K  sanyo
 2sk3291.pdf

Ordering number ENN6413 N-Channel Silicon MOSFET 2SK3291 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3291] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C P... See More ⇒

 8.5. Size:42K  renesas
 2sk3290.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒

 8.6. Size:81K  nec
 2sk3299-s-zj.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3299 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3299 is N-Channel MOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristics, 2SK3299 TO-220AB designed for high voltage applications such as switching power 2SK3299-S TO-262 supply, AC adapter. 2S... See More ⇒

 8.7. Size:46K  kexin
 2sk3294.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3294 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 Gate voltage rating 30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS =10V, ID =10A) +0.1 0.1max 1.27-0.1 Low input capacitance Ciss =1500pFTYP. (VDS =10 V, VGS =0 V) +0.1 0.81-0.1 2.54 Avalanche capability rated 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 Bu... See More ⇒

 8.8. Size:42K  kexin
 2sk3295.pdf

SMD Type IC SMD Type Transistors MOS Field Effect Transistor 2SK3295 TO-263 Unit mm Features +0.2 4.5 V drive available 4.57-0.2 1.27+0.1 -0.1 Low on-state resistance RDS(on)1 =18 m MAX. (VGS =10V, ID =18A) Low gate charge QG =16nCTYP. (ID =35A, VDD =16V, VGS =10V) 0.1max 1.27+0.1 -0.1 Built-in gate protection diode +0.1 Surface mount device available 0.81-0.1 2.54 1Gate... See More ⇒

 8.9. Size:851K  cn vbsemi
 2sk3290.pdf

2SK3290 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G ... See More ⇒