All MOSFET. 2SK3298B Datasheet

 

2SK3298B MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3298B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 320 pF

Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm

Package: TO220F

2SK3298B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3298B Datasheet (PDF)

1.1. 2sk3298b.pdf Size:291K _update

2SK3298B
2SK3298B

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

3.1. 2sk3298.pdf Size:226K _update

2SK3298B
2SK3298B

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.1. 2sk3299-s-zj.pdf Size:81K _update

2SK3298B
2SK3298B

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3299 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3299 is N-Channel MOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristics, 2SK3299 TO-220AB designed for high voltage applications such as switching power 2SK3299-S TO-262 supply, AC adapter. 2S

4.2. 2sk3295.pdf Size:42K _update

2SK3298B
2SK3298B

SMD Type IC SMD Type Transistors MOS Field Effect Transistor 2SK3295 TO-263 Unit: mm Features +0.2 4.5 V drive available 4.57-0.2 1.27+0.1 -0.1 Low on-state resistance RDS(on)1 =18 mÙMAX. (VGS =10V, ID =18A) Low gate charge QG =16nCTYP. (ID =35A, VDD =16V, VGS =10V) 0.1max 1.27+0.1 -0.1 Built-in gate protection diode +0.1 Surface mount device available 0.81-0.1 2.54 1Gate

 4.3. 2sk3294.pdf Size:46K _update

2SK3298B

SMD Type MOSFET MOS Field Effect Transistor 2SK3294 TO-263 Unit: mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 Gate voltage rating 30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS =10V, ID =10A) +0.1 0.1max 1.27-0.1 Low input capacitance Ciss =1500pFTYP. (VDS =10 V, VGS =0 V) +0.1 0.81-0.1 2.54 Avalanche capability rated 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 Bu

4.4. 2sk3296.pdf Size:422K _toshiba

2SK3298B
2SK3298B

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3296 TO-220AB designed for low voltage high current applications such as 2SK3296-S TO-262 DC/DC converter wit

 4.5. 2sk3291.pdf Size:34K _sanyo

2SK3298B
2SK3298B

Ordering number:ENN6413 N-Channel Silicon MOSFET 2SK3291 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3291] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Paramete

4.6. 2sk3293.pdf Size:42K _sanyo

2SK3298B
2SK3298B

Ordering number:ENN6345 N-Channel Silicon MOSFET 2SK3293 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3293] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Paramete

4.7. 2sk3292.pdf Size:33K _sanyo

2SK3298B
2SK3298B

Ordering number:ENN6414 N-Channel Silicon MOSFET 2SK3292 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3292] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Paramete

4.8. 2sk3290.pdf Size:42K _renesas

2SK3298B
2SK3298B

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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