IRF9530NL Datasheet and Replacement
Type Designator: IRF9530NL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO262
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IRF9530NL Datasheet (PDF)
irf9530nspbf irf9530nlpbf.pdf

IRF9530NSPbF IRF9530NLPbF Benefits HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) VDSS -100V Low-profile through-hole(IRF9530NL) 175C Operating Temperature RDS(on) 0.20 Fast Switching ID -14A P-Channel Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFET Power MOSFETs from In
irf9530npbf.pdf

IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription
irf9530ns.pdf

PD - 91523AIRF9530NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9530NS)VDSS = -100V Low-profile through-hole (IRF9530NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG P-ChannelID = -14A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi
irf9530n.pdf

PD - 91482CIRF9530NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 P-ChannelG Fully Avalanche RatedID = -14ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
Datasheet: IRF9520NL , IRF9520NS , IRF9521 , IRF9522 , IRF9523 , IRF9530 , IRF9530N , APT5015BLC , IRF740 , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF9540 , IRF9540N , IRF9540NL , IRF9540NS .
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