2SK1927 Specs and Replacement
Type Designator: 2SK1927
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id| ⓘ - Maximum Drain Current: 15 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220FL
- MOSFET ⓘ Cross-Reference Search
2SK1927 datasheet
8.1. Size:362K toshiba
2sk192a.pdf 
2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications Unit mm VHF Band Amplifier Applications High power gain GPS = 24dB (typ.) (f = 100 MHz) Low noise figure NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance Yfs = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Sy... See More ⇒
8.3. Size:114K sanyo
2sk1924.pdf 
Ordering number EN4313 N-Channel Silicon MOSFET 2SK1924 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2052C High-speed diode (trr=140ns). [2SK1924] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Gate 1 2 3 2 Drain 3 Source 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings ... See More ⇒
8.4. Size:93K sanyo
2sk1920.pdf 
Ordering number EN4244A N-Channel Silicon MOSFET 2SK1920 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1920] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK1920] 6.5 2.3 5.0 0.5 4 0.5... See More ⇒
8.5. Size:109K sanyo
2sk1922.pdf 
Ordering number EN4311 N-Channel Silicon MOSFET 2SK1922 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2052C High-speed diode (trr=100ns). [2SK1922] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Gate 1 2 3 2 Drain 3 Source 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings ... See More ⇒
8.7. Size:113K sanyo
2sk1923.pdf 
Ordering number EN4312 N-Channel Silicon MOSFET 2SK1923 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2052C High-speed diode (trr=120ns). [2SK1923] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Gate 1 2 3 2 Drain 3 Source 2.55 2.55 SANYO TO-220AB Specifications Absolute Maximum Ratings ... See More ⇒
8.8. Size:115K sanyo
2sk1925.pdf 
Ordering number ENN4314 N-Channel Silicon MOSFET 2SK1925 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2056A High-speed diode (trr=150ns). [2SK1925] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 Gate 0.6 2 Drain 3 Source 5.45 5.45 SANYO TO-3PB Specifications Absolute Maximum... See More ⇒
8.9. Size:214K inchange semiconductor
2sk1924.pdf 
isc N-Channel MOSFET Transistor 2SK1924 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 600 V ... See More ⇒
8.10. Size:216K inchange semiconductor
2sk1922.pdf 
isc N-Channel MOSFET Transistor 2SK1922 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) ... See More ⇒
8.11. Size:214K inchange semiconductor
2sk1923.pdf 
isc N-Channel MOSFET Transistor 2SK1923 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Chopper regulator and motor drive ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0... See More ⇒
8.12. Size:217K inchange semiconductor
2sk1925.pdf 
isc N-Channel MOSFET Transistor 2SK1925 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 600... See More ⇒
Detailed specifications: 2SK1831, 2SK1836, 2SK1855, 2SK1858, 2SK1865, 2SK1879, 2SK1913, 2SK1915, IRF4905, 2SK1928, 2SK2224-01R, 2SK2225-80-E, 2SK2228, 2SK2230, 2SK2235, 2SK2236, 2SK2247
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