2SK2235 Specs and Replacement
Type Designator: 2SK2235
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ -
Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO251
- MOSFET ⓘ Cross-Reference Search
2SK2235 datasheet
8.2. Size:419K toshiba
2sk2231.pdf 
2SK2231 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2231 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.12 (typ.) DS (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem... See More ⇒
8.4. Size:401K toshiba
2sk2233.pdf 
2SK2233 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2233 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.022 (typ.) DS (ON) High forward transfer admittance Y = 27 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhanc... See More ⇒
8.5. Size:426K toshiba
2sk2232.pdf 
2SK2232 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2232 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 36 m (typ.) High forward transfer admittance Yfs = 16 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode ... See More ⇒
8.7. Size:100K sanyo
2sk223.pdf 
Ordering number EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features Package Dimensions Ultrahigh withstand voltage (VGDS 80V). unit mm Due to low gate leakage currents even at high 2019B voltage, the 2SK223 is suitable for a wide range of [2SK223] application (IGDL=1nA/VDS=50V, ID=1mA). 5.0 4.0 4.0 High yfs ( yfs =... See More ⇒
8.8. Size:848K cn vbsemi
2sk2231.pdf 
2SK2231 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor ... See More ⇒
8.10. Size:51K inchange semiconductor
2sk2236.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2236 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V ... See More ⇒
8.11. Size:209K inchange semiconductor
2sk2237.pdf 
isc N-Channel MOSFET Transistor 2SK2237 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain... See More ⇒
Detailed specifications: 2SK1913, 2SK1915, 2SK1927, 2SK1928, 2SK2224-01R, 2SK2225-80-E, 2SK2228, 2SK2230, SPP20N60C3, 2SK2236, 2SK2247, 2SK2252-01L, 2SK2252-01S, 2SK2257-01, 2SK2258-01, 2SK3054C, 2SK3064
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.