All MOSFET. IRF9532 Datasheet

 

IRF9532 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF9532
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220

 IRF9532 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9532 Datasheet (PDF)

 ..1. Size:449K  international rectifier
irf9530 irf9531 irf9532 irf9533.pdf

IRF9532
IRF9532

 8.1. Size:225K  international rectifier
irf9530npbf.pdf

IRF9532
IRF9532

IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription

 8.2. Size:173K  international rectifier
irf9530ns.pdf

IRF9532
IRF9532

PD - 91523AIRF9530NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9530NS)VDSS = -100V Low-profile through-hole (IRF9530NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG P-ChannelID = -14A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

 8.3. Size:1028K  international rectifier
irf9530spbf.pdf

IRF9532
IRF9532

PD- 95988IRF9530SPbF Lead-Free06/06/05Document Number: 91077 www.vishay.com1IRF9530SPbFDocument Number: 91077 www.vishay.com2IRF9530SPbFDocument Number: 91077 www.vishay.com3IRF9530SPbFDocument Number: 91077 www.vishay.com4IRF9530SPbFDocument Number: 91077 www.vishay.com5IRF9530SPbFDocument Number: 91077 www.vishay.com6IRF9530SPbFPeak Diode R

 8.4. Size:113K  international rectifier
irf9530n.pdf

IRF9532
IRF9532

PD - 91482CIRF9530NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 P-ChannelG Fully Avalanche RatedID = -14ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

 8.5. Size:176K  international rectifier
irf9530s.pdf

IRF9532
IRF9532

 8.6. Size:173K  international rectifier
irf9530.pdf

IRF9532
IRF9532

 8.7. Size:761K  international rectifier
irf9530nspbf.pdf

IRF9532
IRF9532

PD- 95439IRF9530NSPbFIRF9530NLPbF Lead-Freewww.irf.com 104/26/05IRF9530NS/LPbF2 www.irf.comIRF9530NS/LPbFwww.irf.com 3IRF9530NS/LPbF4 www.irf.comIRF9530NS/LPbFwww.irf.com 5IRF9530NS/LPbF6 www.irf.comIRF9530NS/LPbFwww.irf.com 7IRF9530NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS

 8.8. Size:520K  samsung
irfp9130-33 irf9130-33 irf9530-33.pdf

IRF9532
IRF9532

 8.9. Size:520K  samsung
irf9130-33 irfp9130-33 irf9530-33.pdf

IRF9532
IRF9532

 8.10. Size:171K  vishay
irf9530s sihf9530s.pdf

IRF9532
IRF9532

IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig

 8.11. Size:196K  vishay
irf9530spbf sihf9530s.pdf

IRF9532
IRF9532

IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig

 8.12. Size:202K  vishay
irf9530 sihf9530.pdf

IRF9532
IRF9532

IRF9530, SiHF9530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.30 P-Channel RoHS*Qg (Max.) (nC) 38COMPLIANT 175 C Operating TemperatureQgs (nC) 6.8 Fast SwitchingQgd (nC) 21 Ease of ParallelingConfiguration Single Simple Drive Requir

 8.13. Size:170K  vishay
irf9530s.pdf

IRF9532
IRF9532

IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig

 8.14. Size:203K  vishay
irf9530pbf sihf9530.pdf

IRF9532
IRF9532

IRF9530, SiHF9530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.30 P-Channel RoHS*Qg (Max.) (nC) 38COMPLIANT 175 C Operating TemperatureQgs (nC) 6.8 Fast SwitchingQgd (nC) 21 Ease of ParallelingConfiguration Single Simple Drive Requir

 8.15. Size:225K  infineon
irf9530npbf.pdf

IRF9532
IRF9532

IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription

 8.16. Size:817K  infineon
irf9530nspbf irf9530nlpbf.pdf

IRF9532
IRF9532

IRF9530NSPbF IRF9530NLPbF Benefits HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) VDSS -100V Low-profile through-hole(IRF9530NL) 175C Operating Temperature RDS(on) 0.20 Fast Switching ID -14A P-Channel Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFET Power MOSFETs from In

 8.17. Size:68K  intersil
irf9530 rf1s9530sm.pdf

IRF9532
IRF9532

IRF9530, RF1S9530SMData Sheet July 1999 File Number 2221.412A, 100V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 12A, 100VThese are P-Channel enhancement mode silicon gate rDS(ON) = 0.300power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the

 8.18. Size:520K  semelab
irf9530-220m.pdf

IRF9532
IRF9532

4.83 (0.190)10.92 (0.430)5.33 (0.210)10.41 (0.410)0.64 (0.025)0.89 (0.035)3.56 (0.140)Dia3.81 (0.150)1 2 30.89 (0.035)Dia.1.27 (0.050)2.54 (0.100) 3.05 (0.120)BSC BSCTO220M (TO-257AB) Pin 1 - Gate Pin 2 - Drain Pin 3 - Source 13.21 (0.52)13.72 (0.54)13.21 (0.52)13

 8.19. Size:22K  semelab
irf9530smd.pdf

IRF9532
IRF9532

IRF9530SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS !VDSS -100VID(cont) -8ARDS(on) 0.35FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS

 8.20. Size:1236K  kexin
irf9530.pdf

IRF9532
IRF9532

DIP Type MOSFETP-Channel MOSFETIRF9530 (KRF9530)TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) =-100V ID =-13 A (VGS =-10V) RDS(ON) 205m (VGS =-10V)1.27 0.10 1.52 0.102 RDS(ON) 300m (VGS =-4.5V) 1 30.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54TYP[2.54 0.20 ] [2.54 0.2

 8.21. Size:1531K  cn vbsemi
irf9530npbf.pdf

IRF9532
IRF9532

IRF9530NPBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Swi

 8.22. Size:1457K  cn vbsemi
irf9530p.pdf

IRF9532
IRF9532

IRF9530Pwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Switch

 8.23. Size:241K  inchange semiconductor
irf9530n.pdf

IRF9532
IRF9532

isc P-Channel MOSFET Transistor IRF9530N,IIRF9530NFEATURESStatic drain-source on-resistance:RDS(on)0.2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia

 8.24. Size:232K  inchange semiconductor
irf9530s.pdf

IRF9532
IRF9532

INCHANGE Semiconductorisc P-Channel Mosfet Transistor IRF9530SFEATURES-12A-100VSingle pulse avalanche energy ratedStatic Drain-Source On-Resistance: R =0.3(Max)DS(on)SOA is power dissipation limitedNanosecond switching speedsLinear transfer characteristicsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONThe

 8.25. Size:241K  inchange semiconductor
irf9530pbf.pdf

IRF9532
IRF9532

isc P-Channel MOSFET Transistor IRF9530PBFFEATURESStatic drain-source on-resistance:RDS(on)0.3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONPower management in notebook computerPortable equipment and battery powered systemsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 8.26. Size:234K  inchange semiconductor
irf9530.pdf

IRF9532
IRF9532

INCHANGE Semiconductorisc P-Channel Mosfet Transistor IRF9530FEATURES-12A-100VSingle pulse avalanche energy ratedStatic Drain-Source On-Resistance: R =0.3(Max)DS(on)SOA is power dissipation limitedNanosecond switching speedsLinear transfer characteristicsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONThe

Datasheet: IRF9522 , IRF9523 , IRF9530 , IRF9530N , APT5015BLC , IRF9530NL , IRF9530NS , IRF9531 , IRF740 , IRF9533 , IRF9540 , IRF9540N , IRF9540NL , IRF9540NS , IRF9541 , IRF9542 , IRF9543 .

 

 
Back to Top