2SK403 Datasheet and Replacement
Type Designator: 2SK403
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
Package: TO3P
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2SK403 Datasheet (PDF)
2sk403.pdf

isc N-Channel MOSFET Transistor 2SK403DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching.High Cutoff frequency.No secondary breakdown.Suitable for switching reg
2sk4034.pdf

2SK4034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) 2SK4034 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON-resistance: RDS (ON) = 4.2 m(typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current: IDSS = 100 A (VDS = 60 V) Enhancement mode: Vth = 1.5 to
2sk4033.pdf

2SK4033 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4033 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mmApplications 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.07 (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode : V
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: PD648BA | MMBF5457 | 2N3797
Keywords - 2SK403 MOSFET datasheet
2SK403 cross reference
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History: PD648BA | MMBF5457 | 2N3797



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