2SK889 MOSFET Datasheet: N-Ch, 100V, 27A. Full specification with pinout and replacement list

2SK889 Specs and Replacement

Type Designator: 2SK889

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 780 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO220AB

2SK889 substitution

- MOSFET ⓘ Cross-Reference Search

2SK889 datasheet

..1. Size:60K toshiba
2sk889.pdf pdf_icon

... See More ⇒

9.1. Size:174K toshiba
2sk882.pdf pdf_icon

2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit mm Low reverse transfer capacitance Crss = 0.025 pF (typ.) Low noise figure NF = 1.7dB (typ.) High power gain G = 28dB (typ.) ps Recommend operation voltage 5 15 V Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit ... See More ⇒

9.2. Size:294K toshiba
2sk880.pdf pdf_icon

2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit mm High Yfs Yfs = 15 mS (typ.) at VDS = 10 V, VGS = 0 High breakdown voltage VGDS = -50 V Low noise NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k High input impedance IGSS = -1 nA (max) at VGS = -30 V... See More ⇒

9.3. Size:110K toshiba
2sk888.pdf pdf_icon