2SK889 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK889
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 27 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 780 pF
Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm
Package: TO220AB
2SK889 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK889 Datasheet (PDF)
2sk882.pdf
2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm Low reverse transfer capacitance: Crss = 0.025 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: G = 28dB (typ.) ps Recommend operation voltage: 5~15 V Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Unit
2sk880.pdf
2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit: mm High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = -50 V Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k High input impedance: IGSS = -1 nA (max) at VGS = -30 V
2sk888.pdf
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2sk881.pdf
2SK881 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK881 FM Tuner Applications Unit: mmVHF Band Amplifier Applications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 9 mS (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitGate-drain voltage VGDO -18 VGate current IG 10 mA
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