2SK893 Datasheet and Replacement
Type Designator: 2SK893
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 15
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
TO220AB
- MOSFET Cross-Reference Search
2SK893 Datasheet (PDF)
..1. Size:59K inchange semiconductor
2sk893.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK893 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed APPLICATIONS High voltage. high speed power Switching. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GSV G
9.5. Size:87K toshiba
2sk890.pdf 
www.DataSheet4U.com
9.7. Size:137K fuji
2sk897-m.pdf 
"2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003
9.8. Size:59K inchange semiconductor
2sk892.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK892 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM R
9.9. Size:303K inchange semiconductor
2sk895.pdf 
isc N-Channel MOSFET Transistor 2SK895FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
9.10. Size:234K inchange semiconductor
2sk899.pdf 
isc N-Channel MOSFET Transistor 2SK899DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
9.11. Size:288K inchange semiconductor
2sk891.pdf 
isc N-Channel MOSFET Transistor 2SK891FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
9.12. Size:303K inchange semiconductor
2sk896.pdf 
isc N-Channel MOSFET Transistor 2SK896FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
9.13. Size:279K inchange semiconductor
2sk897-mr.pdf 
isc N-Channel MOSFET Transistor 2SK897-MRFEATURESDrain Current : I = 4.0A@ T =25D CDrain Source Voltage: V = 550V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
9.14. Size:198K inchange semiconductor
2sk894.pdf 
isc N-Channel MOSFET Transistor 2SK894DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage.high speed power Switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vo
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History: JNFH20N60C
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Keywords - 2SK893 MOSFET datasheet
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