2SK796A Datasheet and Replacement
Type Designator: 2SK796A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 55 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TOP3F
2SK796A substitution
2SK796A Datasheet (PDF)
2sk796a.pdf

isc N-Channel MOSFET Transistor 2SK796ADESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
2sk796.pdf

isc N-Channel MOSFET Transistor 2SK796DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
Datasheet: 2SK889 , 2SK890 , 2SK891 , 2SK892 , 2SK893 , 2SK894 , 2SK897-M , 2SK796 , IRFB31N20D , 2SK807 , 2SK818 , 2SK818A , 2SK951-M , 2SK956-01R , 2SK957-M , 2SK957-MR , 2SK1011-01 .
History: SFF250ZDB | 2SK3026 | HY6N60T | CHM2346ESGP | AFP3413A | SIHFI9610G | 2SK2149
Keywords - 2SK796A MOSFET datasheet
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History: SFF250ZDB | 2SK3026 | HY6N60T | CHM2346ESGP | AFP3413A | SIHFI9610G | 2SK2149



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