2SK818 PDF and Equivalents Search

 ..1. Size:203K  inchange semiconductor
 2sk818.pdf

isc N-Channel MOSFET Transistor 2SK818 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay ... See More ⇒

 0.1. Size:146K  panasonic
 2sk818-a.pdf

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 0.2. Size:203K  inchange semiconductor
 2sk818a.pdf

isc N-Channel MOSFET Transistor 2SK818A DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay... See More ⇒

 9.1. Size:355K  1
 2sk815.pdf

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 2sk810.pdf

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 2sk814.pdf

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 2sk811.pdf

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 9.5. Size:240K  nec
 2sk819.pdf

2SK819 PCB 24 ... See More ⇒

 9.6. Size:174K  nec
 2sk812.pdf

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 9.7. Size:176K  nec
 2sk817.pdf

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 9.8. Size:289K  inchange semiconductor
 2sk810.pdf

isc N-Channel MOSFET Transistor 2SK810 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 9.9. Size:279K  inchange semiconductor
 2sk811.pdf

isc N-Channel MOSFET Transistor 2SK811 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 9.10. Size:279K  inchange semiconductor
 2sk817.pdf

isc N-Channel MOSFET Transistor 2SK817 FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒