2SK957-MR PDF and Equivalents Search

 ..1. Size:141K  fuji
 2sk957-mr.pdf

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 ..2. Size:279K  inchange semiconductor
 2sk957-mr.pdf

isc N-Channel MOSFET Transistor 2SK957-MR FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 8.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 6.1. Size:142K  fuji
 2sk957-m.pdf

"2SK957M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK957M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK957M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 ... See More ⇒

 9.1. Size:145K  1
 2sk959.pdf

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 9.2. Size:143K  1
 2sk958.pdf

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 9.3. Size:142K  1
 2sk956.pdf

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 9.4. Size:86K  1
 2sk954.pdf

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 9.5. Size:142K  1
 2sk955.pdf

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 9.6. Size:227K  1
 2sk950.pdf

FUJI POWER MOSFET 2SK950 N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High current TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage Applications Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source JEDEC TO-220AB EIAJ SC-46 Equivalent circuit schematic Maximum ratings and characterist... See More ⇒

 9.7. Size:145K  1
 2sk953.pdf

Discontinued product. Discontinued product. Discontinued product. ... See More ⇒

 9.8. Size:138K  fuji
 2sk951-m.pdf

"2SK951M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK951M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK951M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 ... See More ⇒

 9.9. Size:135K  fuji
 2sk951mr.pdf

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 9.10. Size:132K  fuji
 2sk952.pdf

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 9.11. Size:163K  fuji
 2sk956-01r.pdf

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 9.12. Size:201K  inchange semiconductor
 2sk959.pdf

isc N-Channel MOSFET Transistor 2SK959 DESCRIPTION Drain Current I =2A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage. high speed applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒

 9.13. Size:197K  inchange semiconductor
 2sk958.pdf

isc N-Channel MOSFET Transistor 2SK958 DESCRIPTION Drain Current I =2A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage. high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

 9.14. Size:203K  inchange semiconductor
 2sk956.pdf

isc N-Channel MOSFET Transistor 2SK956 DESCRIPTION Drain Current I =9A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor co... See More ⇒

 9.15. Size:202K  inchange semiconductor
 2sk954.pdf

isc N-Channel MOSFET Transistor 2SK954 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage. high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒

 9.16. Size:202K  inchange semiconductor
 2sk955.pdf

isc N-Channel MOSFET Transistor 2SK955 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor co... See More ⇒

 9.17. Size:202K  inchange semiconductor
 2sk950.pdf

isc N-Channel MOSFET Transistor 2SK950 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX... See More ⇒

 9.18. Size:200K  inchange semiconductor
 2sk952.pdf

isc N-Channel MOSFET Transistor 2SK952 DESCRIPTION Drain Current I =2.5A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rel... See More ⇒

 9.19. Size:204K  inchange semiconductor
 2sk953.pdf

isc N-Channel MOSFET Transistor 2SK953 DESCRIPTION Drain Current I =2.5A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rel... See More ⇒