2SK1011-01 Datasheet and Replacement
Type Designator: 2SK1011-01
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 10
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 80
nS
Cossⓘ -
Output Capacitance: 160
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65
Ohm
Package:
TO3P
-
MOSFET ⓘ Cross-Reference Search
2SK1011-01 Datasheet (PDF)
7.1. Size:202K inchange semiconductor
2sk1011.pdf 
isc N-Channel MOSFET Transistor 2SK1011DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G
8.1. Size:244K 1
2sk1017.pdf
FUJI POWER MOSFET2SK1017N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-65Equivalent circuit schematicMaximum ratings and
8.2. Size:220K 1
2sk1019.pdf
FUJI POWER MOSFET2SK1019N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PL0.3Low on-resistance 0.220.5 Max 53.2No secondary breakdownLow driving powerHigh voltageVGSS= 30V Guarantee230.2 0.21.10.2Applications0.33.00.2 Switching regulators 0.6+0.25.450.2 5.45UPS1. Gate2. Drain DC-DC co
8.7. Size:254K fuji
2sk1014-01.pdf
FUJI POWER MOSFET2SK1014-01N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-65Equivalent circuit schematicMaximum ratings
8.12. Size:203K inchange semiconductor
2sk1014.pdf
isc N-Channel MOSFET Transistor 2SK1014DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS
8.13. Size:203K inchange semiconductor
2sk1018.pdf
isc N-Channel MOSFET Transistor 2SK1018DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS
8.14. Size:199K inchange semiconductor
2sk1010.pdf
isc N-Channel MOSFET Transistor 2SK1010DESCRIPTIONDrain Current I =6A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
8.15. Size:203K inchange semiconductor
2sk1017.pdf
isc N-Channel MOSFET Transistor 2SK1017DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS
8.16. Size:203K inchange semiconductor
2sk1016.pdf
isc N-Channel MOSFET Transistor 2SK1016DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS
8.17. Size:203K inchange semiconductor
2sk1013.pdf
isc N-Channel MOSFET Transistor 2SK1013DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G
8.18. Size:63K inchange semiconductor
2sk1015.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GSV Gate-Source Voltage 30 V G
8.19. Size:203K inchange semiconductor
2sk1012.pdf
isc N-Channel MOSFET Transistor 2SK1012DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS G
8.20. Size:200K inchange semiconductor
2sk1019.pdf
isc N-Channel MOSFET Transistor 2SK1019DESCRIPTIONDrain Current I =35A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS
Datasheet: 2SK796A
, 2SK807
, 2SK818
, 2SK818A
, 2SK951-M
, 2SK956-01R
, 2SK957-M
, 2SK957-MR
, IRF730
, 2SK1012-01
, 2SK1014-01
, 2SK1015
, 2SK1015-01
, 2SK1016-01
, 2SK1017-01
, 2SK1018
, 2SK1020
.
History: RHK003N06FRA
| 2SK888
| WMN30N80M3
| 2SJ605-Z
| VBM1202M
| SFF240J
| BUZ83
Keywords - 2SK1011-01 MOSFET datasheet
2SK1011-01 cross reference
2SK1011-01 equivalent finder
2SK1011-01 lookup
2SK1011-01 substitution
2SK1011-01 replacement
